%0 Journal Article %1 Northrup2000 %A Northrup, John E. %A Neugebauer, J. %A Feenstra, R. M. %A Smith, A. R. %D 2000 %I American Physical Society %J Phys. Rev. B %K GaN structure surface %N 15 %P 9932--9935 %R 10.1103/PhysRevB.61.9932 %T Structure of GaN(0001): The laterally contracted Ga bilayer model %V 61

@article{Northrup2000, added-at = {2010-08-19T14:26:50.000+0200}, author = {Northrup, John E. and Neugebauer, J. and Feenstra, R. M. and Smith, A. R.}, biburl = {https://www.bibsonomy.org/bibtex/22a8ba832a615a46ea6a9421db1830c2d/pmd}, doi = {10.1103/PhysRevB.61.9932}, file = {Northrup2000.pdf:Northrup2000.pdf:PDF}, groups = {public}, interhash = {ac8d419388a72eb6d8b896f55d426f2b}, intrahash = {2a8ba832a615a46ea6a9421db1830c2d}, journal = {Phys. Rev. B}, keywords = {GaN structure surface}, month = Apr, number = 15, numpages = {3}, pages = {9932--9935}, publisher = {American Physical Society}, timestamp = {2011-09-27T11:23:55.000+0200}, title = {Structure of GaN(0001): The laterally contracted Ga bilayer model}, username = {pmd}, volume = 61, year = 2000 }