%0 Journal Article %1 journals/mr/AguileraPNA05 %A Aguilera, Lidia %A Porti, Marc %A Nafría, Montserrat %A Aymerich, Xavier %D 2005 %J Microelectron. Reliab. %K dblp %N 9-11 %P 1390-1393 %T Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale. %U http://dblp.uni-trier.de/db/journals/mr/mr45.html#AguileraPNA05 %V 45

@article{journals/mr/AguileraPNA05, added-at = {2020-02-22T00:00:00.000+0100}, author = {Aguilera, Lidia and Porti, Marc and Nafría, Montserrat and Aymerich, Xavier}, biburl = {https://www.bibsonomy.org/bibtex/26051374c4af60b28730fc45bf38fa22f/dblp}, ee = {https://doi.org/10.1016/j.microrel.2005.07.105}, interhash = {af00b278e4edb2e7b6837da72b62473c}, intrahash = {6051374c4af60b28730fc45bf38fa22f}, journal = {Microelectron. Reliab.}, keywords = {dblp}, number = {9-11}, pages = {1390-1393}, timestamp = {2020-02-25T13:26:24.000+0100}, title = {Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale.}, url = {http://dblp.uni-trier.de/db/journals/mr/mr45.html#AguileraPNA05}, volume = 45, year = 2005 }