%0 Conference Paper %1 conf/isscc/ChangCCSWY15 %A Chang, Meng-Fan %A Chen, Chien-Fu %A Chang, Ting-Hao %A Shuai, Chi-Chang %A Wang, Yen-Yao %A Yamauchi, Hiroyuki %B ISSCC %D 2015 %I IEEE %K dblp %P 1-3 %T 17.3 A 28nm 256kb 6T-SRAM with 280mV improvement in VMIN using a dual-split-control assist scheme. %U http://dblp.uni-trier.de/db/conf/isscc/isscc2015.html#ChangCCSWY15 %@ 978-1-4799-6224-2

@inproceedings{conf/isscc/ChangCCSWY15, added-at = {2024-05-07T00:00:00.000+0200}, author = {Chang, Meng-Fan and Chen, Chien-Fu and Chang, Ting-Hao and Shuai, Chi-Chang and Wang, Yen-Yao and Yamauchi, Hiroyuki}, biburl = {https://www.bibsonomy.org/bibtex/2d92f52343051b2ea23a479ca48ef62a4/dblp}, booktitle = {ISSCC}, crossref = {conf/isscc/2015}, ee = {https://doi.org/10.1109/ISSCC.2015.7063052}, interhash = {bbb6d6582133720d5796f95751b166a3}, intrahash = {d92f52343051b2ea23a479ca48ef62a4}, isbn = {978-1-4799-6224-2}, keywords = {dblp}, pages = {1-3}, publisher = {IEEE}, timestamp = {2024-05-13T09:02:18.000+0200}, title = {17.3 A 28nm 256kb 6T-SRAM with 280mV improvement in VMIN using a dual-split-control assist scheme.}, url = {http://dblp.uni-trier.de/db/conf/isscc/isscc2015.html#ChangCCSWY15}, year = 2015 }