%0 Conference Paper %1 conf/bcicts/FangMRW22 %A Fang, Ryan %A Ma, Dylan %A Radhakrishna, Ujwal %A Wei, Lan %B BCICTS %D 2022 %I IEEE %K dblp %P 21-24 %T MVSG GaN-HEMT Model: Approach to Simulate Fringing Field Capacitances, Gate Current De-biasing, and Charge Trapping Effects. %U http://dblp.uni-trier.de/db/conf/bcicts/bcicts2022.html#FangMRW22 %@ 978-1-6654-9132-7

@inproceedings{conf/bcicts/FangMRW22, added-at = {2023-09-30T00:00:00.000+0200}, author = {Fang, Ryan and Ma, Dylan and Radhakrishna, Ujwal and Wei, Lan}, biburl = {https://www.bibsonomy.org/bibtex/25566bfcfda112328db458a13cb18271e/dblp}, booktitle = {BCICTS}, crossref = {conf/bcicts/2022}, ee = {https://doi.org/10.1109/BCICTS53451.2022.10051741}, interhash = {beb158c751e1c3eb78811f2aaad5ec98}, intrahash = {5566bfcfda112328db458a13cb18271e}, isbn = {978-1-6654-9132-7}, keywords = {dblp}, pages = {21-24}, publisher = {IEEE}, timestamp = {2024-04-09T18:19:23.000+0200}, title = {MVSG GaN-HEMT Model: Approach to Simulate Fringing Field Capacitances, Gate Current De-biasing, and Charge Trapping Effects.}, url = {http://dblp.uni-trier.de/db/conf/bcicts/bcicts2022.html#FangMRW22}, year = 2022 }