%0 Conference Paper %1 conf/cicc/HwangR08 %A Hwang, Myeong-Eun %A Roy, Kaushik %B CICC %D 2008 %I IEEE %K dblp %P 419-422 %T A 135mV 0.13μW process tolerant 6T subthreshold DTMOS SRAM in 90nm technology. %U http://dblp.uni-trier.de/db/conf/cicc/cicc2008.html#HwangR08 %@ 978-1-4244-2018-6

@inproceedings{conf/cicc/HwangR08, added-at = {2017-05-17T00:00:00.000+0200}, author = {Hwang, Myeong-Eun and Roy, Kaushik}, biburl = {https://www.bibsonomy.org/bibtex/239555de019809108e9a234e4140dc197/dblp}, booktitle = {CICC}, crossref = {conf/cicc/2008}, ee = {https://doi.org/10.1109/CICC.2008.4672109}, interhash = {c3d531547d50177131e38a6a1c0accca}, intrahash = {39555de019809108e9a234e4140dc197}, isbn = {978-1-4244-2018-6}, keywords = {dblp}, pages = {419-422}, publisher = {IEEE}, timestamp = {2019-10-17T23:07:57.000+0200}, title = {A 135mV 0.13μW process tolerant 6T subthreshold DTMOS SRAM in 90nm technology.}, url = {http://dblp.uni-trier.de/db/conf/cicc/cicc2008.html#HwangR08}, year = 2008 }