%0 Journal Article %1 palmstrom2018interfacial %A Palmstrom, Axel F. %A Raiford, James A. %A Prasanna, Rohit %A Bush, Kevin A. %A Sponseller, Melany %A Cheacharoen, Rongrong %A Minichetti, Maxmillian C. %A Bergsman, David S. %A Leijtens, Tomas %A Wang, Hsin‐Ping %A Bulović, Vladimir %A McGehee, Michael D. %A Bent, Stacey F. %D 2018 %I Wiley Online Library %J Advanced Energy Materials %K ALD charge_transport interfaces perovskite tin_oxide %R 10.1002/aenm.201800591 %T Interfacial Effects of Tin Oxide Atomic Layer Deposition in Metal Halide Perovskite Photovoltaics %U https://doi.org/10.1002/aenm.201800591 %X Metal halide perovskites offer a wide and tunable bandgap, making them promising candidates for top‐cell absorbers in tandem photovoltaics. In this work, the authors aim to understand the atomic layer deposition (ALD) precursor–perovskite interactions of the tin oxide ALD system and the role of organic fullerenes at the perovskite–tin oxide interface while establishing a framework for developing alternative perovskite‐compatible ALD processes in the future. It is shown, in the case of tin oxide ALD growth with tetrakis(dimethylamino)tin(IV) and water on FA0.83Cs0.17Pb(I0.83Br0.17)3 perovskite, that perovskite stability is most sensitive to metal–organic exposure at elevated temperatures with an onset near 110 °C, resulting in removal of the formamidinium cation. Transitioning from ALD to pulsed‐chemical vapor deposition tin oxide growth can minimize the degradation effects. Investigation of fullerenes at the perovskite interface shows that thin fullerene layers offer minor improvements to perovskite stability under ALD conditions, but significant enhancement in carrier extraction. Fullerene materials are undesirable due to fabrication cost and poor mechanical stability. Compositional tuning of the perovskite material can improve the fullerene‐free device performance. This method is demonstrated with a bromine‐rich perovskite phase to enable an 8.2% efficient perovskite device with all‐inorganic extraction layers. This article highlights key elements for interfacing thin films grown by atomic layer deposition (ALD) with metal halide perovskites. An interaction between the ALD precursor and perovskite film resulting in the removal of the organic cation is reported. Methods to reduce this interaction to guide the development of future perovskite‐compatible ALD systems are demonstrated.

@article{palmstrom2018interfacial, abstract = {Metal halide perovskites offer a wide and tunable bandgap, making them promising candidates for top‐cell absorbers in tandem photovoltaics. In this work, the authors aim to understand the atomic layer deposition (ALD) precursor–perovskite interactions of the tin oxide ALD system and the role of organic fullerenes at the perovskite–tin oxide interface while establishing a framework for developing alternative perovskite‐compatible ALD processes in the future. It is shown, in the case of tin oxide ALD growth with tetrakis(dimethylamino)tin(IV) and water on FA0.83Cs0.17Pb(I0.83Br0.17)3 perovskite, that perovskite stability is most sensitive to metal–organic exposure at elevated temperatures with an onset near 110 °C, resulting in removal of the formamidinium cation. Transitioning from ALD to pulsed‐chemical vapor deposition tin oxide growth can minimize the degradation effects. Investigation of fullerenes at the perovskite interface shows that thin fullerene layers offer minor improvements to perovskite stability under ALD conditions, but significant enhancement in carrier extraction. Fullerene materials are undesirable due to fabrication cost and poor mechanical stability. Compositional tuning of the perovskite material can improve the fullerene‐free device performance. This method is demonstrated with a bromine‐rich perovskite phase to enable an 8.2% efficient perovskite device with all‐inorganic extraction layers. This article highlights key elements for interfacing thin films grown by atomic layer deposition (ALD) with metal halide perovskites. An interaction between the ALD precursor and perovskite film resulting in the removal of the organic cation is reported. Methods to reduce this interaction to guide the development of future perovskite‐compatible ALD systems are demonstrated.}, added-at = {2018-07-16T11:39:00.000+0200}, author = {Palmstrom, Axel F. and Raiford, James A. and Prasanna, Rohit and Bush, Kevin A. and Sponseller, Melany and Cheacharoen, Rongrong and Minichetti, Maxmillian C. and Bergsman, David S. and Leijtens, Tomas and Wang, Hsin‐Ping and Bulović, Vladimir and McGehee, Michael D. and Bent, Stacey F.}, biburl = {https://www.bibsonomy.org/bibtex/283537a1039b9285c4cab96ee17d6cfcd/bretschneider_m}, doi = {10.1002/aenm.201800591}, interhash = {c80035b6f3b12694ba28e816fbbf81d1}, intrahash = {83537a1039b9285c4cab96ee17d6cfcd}, issn = {1614-6832}, journal = {Advanced Energy Materials}, keywords = {ALD charge_transport interfaces perovskite tin_oxide}, month = {6}, publisher = {Wiley Online Library}, timestamp = {2018-07-16T11:39:00.000+0200}, title = {Interfacial Effects of Tin Oxide Atomic Layer Deposition in Metal Halide Perovskite Photovoltaics}, url = {https://doi.org/10.1002/aenm.201800591}, year = 2018 }