Abstract
The electronic band structure of cubic HfO2 is calculated using an ab
initio all-electron self-consistent linear augmented plane-wave method,
within the framework of the local-density approximation and taking into
account full-relativistic contributions. From the band structure, the
carrier effective masses and the complex dielectric function are
obtained. The Gamma-isotropic heavy and light electron effective masses
are shown to be several times heavier than the electron tunneling
effective mass measured recently. The imaginary part of the complex
dielectric function epsilon(2)(omega) is in good agreement with
experimental data from ultraviolet spectroscopic ellipsometry
measurements in bulk yttria-stabilized HfO2 as well as with those
performed in films deposited with the tetrakis diethylamido hafnium
precursor for energies smaller than 9.5 eV. (C) 2004 American Institute
Of Physics.
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