%0 Conference Paper %1 conf/iscas/WeiSKSK10 %A Wei, Xiuqin %A Sekiya, Hiroo %A Kuroiwa, Shingo %A Suetsugu, Tadashi %A Kazimierczuk, Marian K. %B ISCAS %D 2010 %I IEEE %K dblp %P 3200-3203 %T Effect of MOSFET gate-to-drain parasitic capacitance on class-E power amplifier. %U http://dblp.uni-trier.de/db/conf/iscas/iscas2010.html#WeiSKSK10 %@ 978-1-4244-5309-2

@inproceedings{conf/iscas/WeiSKSK10, added-at = {2021-10-14T00:00:00.000+0200}, author = {Wei, Xiuqin and Sekiya, Hiroo and Kuroiwa, Shingo and Suetsugu, Tadashi and Kazimierczuk, Marian K.}, biburl = {https://www.bibsonomy.org/bibtex/2670d34fa26a44d77033900bd25f59b0b/dblp}, booktitle = {ISCAS}, crossref = {conf/iscas/2010}, ee = {https://doi.org/10.1109/ISCAS.2010.5537946}, interhash = {cdac67f6bbc6f40f716c6349afb74b98}, intrahash = {670d34fa26a44d77033900bd25f59b0b}, isbn = {978-1-4244-5309-2}, keywords = {dblp}, pages = {3200-3203}, publisher = {IEEE}, timestamp = {2024-04-10T17:48:00.000+0200}, title = {Effect of MOSFET gate-to-drain parasitic capacitance on class-E power amplifier.}, url = {http://dblp.uni-trier.de/db/conf/iscas/iscas2010.html#WeiSKSK10}, year = 2010 }