%0 Journal Article %1 WOS:000253434100016 %A Maia, F F %A Caetano, E W S %A da Costa, J A P %A Freire, V N %C THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND %D 2008 %I PERGAMON-ELSEVIER SCIENCE LTD %J SOLID STATE COMMUNICATIONS %K electronic transport} {semiconductors; %N 7-8 %P 397-400 %R 10.1016/j.ssc.2007.11.005 %T Band structure anisotropy effects on the ultrafast electron transport in 4H-SiC %V 145 %X We study band structure anisotropy effects on the electron transport transient in 4H-SiC subjected to electric fields parallel and perpendicular to the c-axis direction. Coupled Boltzmann-like energy-momentum balance transport equations are solved numerically within a single equivalent isotropic valley picture in the momentum and energy relaxation time approximation. The electron drift velocity is shown to be higher in the direction parallel to the c-axis than that perpendicular to it, due to the electron effective mass being larger in the former direction. The ultrafast transport regime develops on a subpicosecond scale (less than or similar to 0.2 ps) in both directions, during which an overshoot in the electron drift velocity is observed at 300 K for sufficiently high enough electric fields (>60 kV/cm). (C) 2007 Elsevier Ltd. All rights reserved.

@article{WOS:000253434100016, abstract = {We study band structure anisotropy effects on the electron transport transient in 4H-SiC subjected to electric fields parallel and perpendicular to the c-axis direction. Coupled Boltzmann-like energy-momentum balance transport equations are solved numerically within a single equivalent isotropic valley picture in the momentum and energy relaxation time approximation. The electron drift velocity is shown to be higher in the direction parallel to the c-axis than that perpendicular to it, due to the electron effective mass being larger in the former direction. The ultrafast transport regime develops on a subpicosecond scale (less than or similar to 0.2 ps) in both directions, during which an overshoot in the electron drift velocity is observed at 300 K for sufficiently high enough electric fields (>60 kV/cm). (C) 2007 Elsevier Ltd. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND}, author = {Maia, F F and Caetano, E W S and da Costa, J A P and Freire, V N}, biburl = {https://www.bibsonomy.org/bibtex/2ed3269cea5ac376d12616501736c2b80/ppgfis_ufc_br}, doi = {10.1016/j.ssc.2007.11.005}, interhash = {1ce0181a78890a53bbdd5a01fe5e5a12}, intrahash = {ed3269cea5ac376d12616501736c2b80}, issn = {0038-1098}, journal = {SOLID STATE COMMUNICATIONS}, keywords = {electronic transport} {semiconductors;}, number = {7-8}, pages = {397-400}, publisher = {PERGAMON-ELSEVIER SCIENCE LTD}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Band structure anisotropy effects on the ultrafast electron transport in 4H-SiC}, tppubtype = {article}, volume = 145, year = 2008 }