%0 Conference Paper %1 conf/isscc/ParkKYCKKKCSSPLELKLKKYKSSSKHKLLJ11 %A Park, Ki-Tae %A Kwon, Ohsuk %A Yoon, Sangyong %A Choi, Myung-Hoon %A Kim, In-Mo %A Kim, Bo-Geun %A Kim, Min-Seok %A Choi, Yoon-Hee %A Shin, Seung-Hwan %A Song, Youngson %A Park, Joo-Yong %A Lee, Jae-Eun %A Eun, Chang-Gyu %A Lee, Ho-Chul %A Kim, Hyeong-Jun %A Lee, Jun-Hee %A Kim, Jong-Young %A Kweon, Tae-Min %A Yoon, Hyun-Jun %A Kim, Taehyun %A Shim, Dong-Kyo %A Sel, Jongsun %A Shin, Ji-Yeon %A Kwak, Pansuk %A Han, Jin-Man %A Kim, Keon-Soo %A Lee, Sungsoo %A Lim, Youngho %A Jung, Tae-Sung %B ISSCC %D 2011 %I IEEE %K dblp %P 212-213 %T A 7MB/s 64Gb 3-bit/cell DDR NAND flash memory in 20nm-node technology. %U http://dblp.uni-trier.de/db/conf/isscc/isscc2011.html#ParkKYCKKKCSSPLELKLKKYKSSSKHKLLJ11 %@ 978-1-61284-303-2

@inproceedings{conf/isscc/ParkKYCKKKCSSPLELKLKKYKSSSKHKLLJ11, added-at = {2011-09-30T00:00:00.000+0200}, author = {Park, Ki-Tae and Kwon, Ohsuk and Yoon, Sangyong and Choi, Myung-Hoon and Kim, In-Mo and Kim, Bo-Geun and Kim, Min-Seok and Choi, Yoon-Hee and Shin, Seung-Hwan and Song, Youngson and Park, Joo-Yong and Lee, Jae-Eun and Eun, Chang-Gyu and Lee, Ho-Chul and Kim, Hyeong-Jun and Lee, Jun-Hee and Kim, Jong-Young and Kweon, Tae-Min and Yoon, Hyun-Jun and Kim, Taehyun and Shim, Dong-Kyo and Sel, Jongsun and Shin, Ji-Yeon and Kwak, Pansuk and Han, Jin-Man and Kim, Keon-Soo and Lee, Sungsoo and Lim, Youngho and Jung, Tae-Sung}, biburl = {https://www.bibsonomy.org/bibtex/23c3c947b5e82d76ad40fc39e7e58dc01/dblp}, booktitle = {ISSCC}, crossref = {conf/isscc/2011}, ee = {http://dx.doi.org/10.1109/ISSCC.2011.5746287}, interhash = {d703f50f48f1a7eeb04a433339b3a5a4}, intrahash = {3c3c947b5e82d76ad40fc39e7e58dc01}, isbn = {978-1-61284-303-2}, keywords = {dblp}, pages = {212-213}, publisher = {IEEE}, timestamp = {2011-10-01T11:38:22.000+0200}, title = {A 7MB/s 64Gb 3-bit/cell DDR NAND flash memory in 20nm-node technology.}, url = {http://dblp.uni-trier.de/db/conf/isscc/isscc2011.html#ParkKYCKKKCSSPLELKLKKYKSSSKHKLLJ11}, year = 2011 }