Inproceedings,
A 7MB/s 64Gb 3-bit/cell DDR NAND flash memory in 20nm-node technology.
K. Park, O. Kwon, S. Yoon, M. Choi, I. Kim, B. Kim, M. Kim, Y. Choi, S. Shin, Y. Song, J. Park, J. Lee, C. Eun, H. Lee, H. Kim, J. Lee, J. Kim, T. Kweon, H. Yoon, T. Kim, D. Shim, J. Sel, J. Shin, P. Kwak, J. Han, K. Kim, S. Lee, Y. Lim, and T. Jung.ISSCC, page 212-213. IEEE, (2011)
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- conf/isscc/ParkKYCKKKCSSPLELKLKKYKSSSKHKLLJ11
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- inproceedings
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- ISSCC
- year
- 2011
- pages
- 212-213
- publisher
- IEEE
- crossref
- conf/isscc/2011
- ee
- http://dx.doi.org/10.1109/ISSCC.2011.5746287
- isbn
- 978-1-61284-303-2
- url
- http://dblp.uni-trier.de/db/conf/isscc/isscc2011.html#ParkKYCKKKCSSPLELKLKKYKSSSKHKLLJ11
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%1 conf/isscc/ParkKYCKKKCSSPLELKLKKYKSSSKHKLLJ11
%A Park, Ki-Tae
%A Kwon, Ohsuk
%A Yoon, Sangyong
%A Choi, Myung-Hoon
%A Kim, In-Mo
%A Kim, Bo-Geun
%A Kim, Min-Seok
%A Choi, Yoon-Hee
%A Shin, Seung-Hwan
%A Song, Youngson
%A Park, Joo-Yong
%A Lee, Jae-Eun
%A Eun, Chang-Gyu
%A Lee, Ho-Chul
%A Kim, Hyeong-Jun
%A Lee, Jun-Hee
%A Kim, Jong-Young
%A Kweon, Tae-Min
%A Yoon, Hyun-Jun
%A Kim, Taehyun
%A Shim, Dong-Kyo
%A Sel, Jongsun
%A Shin, Ji-Yeon
%A Kwak, Pansuk
%A Han, Jin-Man
%A Kim, Keon-Soo
%A Lee, Sungsoo
%A Lim, Youngho
%A Jung, Tae-Sung
%B ISSCC
%D 2011
%I IEEE
%K dblp
%P 212-213
%T A 7MB/s 64Gb 3-bit/cell DDR NAND flash memory in 20nm-node technology.
%U http://dblp.uni-trier.de/db/conf/isscc/isscc2011.html#ParkKYCKKKCSSPLELKLKKYKSSSKHKLLJ11
%@ 978-1-61284-303-2
@inproceedings{conf/isscc/ParkKYCKKKCSSPLELKLKKYKSSSKHKLLJ11,
added-at = {2011-09-30T00:00:00.000+0200},
author = {Park, Ki-Tae and Kwon, Ohsuk and Yoon, Sangyong and Choi, Myung-Hoon and Kim, In-Mo and Kim, Bo-Geun and Kim, Min-Seok and Choi, Yoon-Hee and Shin, Seung-Hwan and Song, Youngson and Park, Joo-Yong and Lee, Jae-Eun and Eun, Chang-Gyu and Lee, Ho-Chul and Kim, Hyeong-Jun and Lee, Jun-Hee and Kim, Jong-Young and Kweon, Tae-Min and Yoon, Hyun-Jun and Kim, Taehyun and Shim, Dong-Kyo and Sel, Jongsun and Shin, Ji-Yeon and Kwak, Pansuk and Han, Jin-Man and Kim, Keon-Soo and Lee, Sungsoo and Lim, Youngho and Jung, Tae-Sung},
biburl = {https://www.bibsonomy.org/bibtex/23c3c947b5e82d76ad40fc39e7e58dc01/dblp},
booktitle = {ISSCC},
crossref = {conf/isscc/2011},
ee = {http://dx.doi.org/10.1109/ISSCC.2011.5746287},
interhash = {d703f50f48f1a7eeb04a433339b3a5a4},
intrahash = {3c3c947b5e82d76ad40fc39e7e58dc01},
isbn = {978-1-61284-303-2},
keywords = {dblp},
pages = {212-213},
publisher = {IEEE},
timestamp = {2011-10-01T11:38:22.000+0200},
title = {A 7MB/s 64Gb 3-bit/cell DDR NAND flash memory in 20nm-node technology.},
url = {http://dblp.uni-trier.de/db/conf/isscc/isscc2011.html#ParkKYCKKKCSSPLELKLKKYKSSSKHKLLJ11},
year = 2011
}