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%0 Journal Article
%1 journals/mr/LakhdharLCDLJM16
%A Lakhdhar, H.
%A Labat, Nathalie
%A Curutchet, Arnaud
%A Defrance, Nicolas
%A Lesecq, Marie
%A de Jaeger, Jean-Claude
%A Malbert, Nathalie
%D 2016
%J Microelectron. Reliab.
%K dblp
%P 594-598
%T Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress.
%U http://dblp.uni-trier.de/db/journals/mr/mr64.html#LakhdharLCDLJM16
%V 64
@article{journals/mr/LakhdharLCDLJM16,
added-at = {2022-03-23T00:00:00.000+0100},
author = {Lakhdhar, H. and Labat, Nathalie and Curutchet, Arnaud and Defrance, Nicolas and Lesecq, Marie and de Jaeger, Jean-Claude and Malbert, Nathalie},
biburl = {https://www.bibsonomy.org/bibtex/2fce43faa182438274a498611b8cb38ad/dblp},
ee = {https://doi.org/10.1016/j.microrel.2016.07.026},
interhash = {e21a86f05af7bdb80468014efb09e29e},
intrahash = {fce43faa182438274a498611b8cb38ad},
journal = {Microelectron. Reliab.},
keywords = {dblp},
pages = {594-598},
timestamp = {2024-04-09T02:50:44.000+0200},
title = {Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress.},
url = {http://dblp.uni-trier.de/db/journals/mr/mr64.html#LakhdharLCDLJM16},
volume = 64,
year = 2016
}