Inproceedings,
15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm2 Bit-Cell, a 3.2GB/S Read Throughput, a 10KCycle Write Endurance and a 10-Year Retention at 105°C.
Y. Huang, S. Liu, H. Chen, H. Feng, C. Li, C. Yang, W. Chang, C. Yang, C. Wu, Y. Lin, T. Yang, C. Chang, W. Chu, H. Chuang, Y. Wang, Y. Chih, and T. Chang.ISSCC, page 288-290. IEEE, (2024)
Meta data
- BibTeX key
- conf/isscc/HuangLCFLYCYWLYCCCWCC24
- entry type
- inproceedings
- booktitle
- ISSCC
- year
- 2024
- pages
- 288-290
- publisher
- IEEE
- crossref
- conf/isscc/2024
- ee
- https://doi.org/10.1109/ISSCC49657.2024.10454367
- isbn
- 979-8-3503-0620-0
- url
- http://dblp.uni-trier.de/db/conf/isscc/isscc2024.html#HuangLCFLYCYWLYCCCWCC24
Tags
Users
Comments and Reviewsshow / hide
Cite this publication
More citation styles
- please select -%0 Conference Paper
%1 conf/isscc/HuangLCFLYCYWLYCCCWCC24
%A Huang, Yi-Cheng
%A Liu, Shang-Hsuan
%A Chen, Hsu-Shun
%A Feng, Hsin-Chang
%A Li, Chih-Feng
%A Yang, Chou-Ying
%A Chang, Wei-Keng
%A Yang, Chang-Feng
%A Wu, Chun-Yu
%A Lin, Yen-Cheng
%A Yang, Tsung-Tse
%A Chang, Chih-Yang
%A Chu, Wen-Ting
%A Chuang, Harry
%A Wang, Yih
%A Chih, Yu-Der
%A Chang, Tsung-Yung Jonathan
%B ISSCC
%D 2024
%I IEEE
%K dblp
%P 288-290
%T 15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm2 Bit-Cell, a 3.2GB/S Read Throughput, a 10KCycle Write Endurance and a 10-Year Retention at 105°C.
%U http://dblp.uni-trier.de/db/conf/isscc/isscc2024.html#HuangLCFLYCYWLYCCCWCC24
%@ 979-8-3503-0620-0
@inproceedings{conf/isscc/HuangLCFLYCYWLYCCCWCC24,
added-at = {2024-05-07T00:00:00.000+0200},
author = {Huang, Yi-Cheng and Liu, Shang-Hsuan and Chen, Hsu-Shun and Feng, Hsin-Chang and Li, Chih-Feng and Yang, Chou-Ying and Chang, Wei-Keng and Yang, Chang-Feng and Wu, Chun-Yu and Lin, Yen-Cheng and Yang, Tsung-Tse and Chang, Chih-Yang and Chu, Wen-Ting and Chuang, Harry and Wang, Yih and Chih, Yu-Der and Chang, Tsung-Yung Jonathan},
biburl = {https://www.bibsonomy.org/bibtex/23a37bb4472d5eeeadb5cd8280d726174/dblp},
booktitle = {ISSCC},
crossref = {conf/isscc/2024},
ee = {https://doi.org/10.1109/ISSCC49657.2024.10454367},
interhash = {e28cf4d6220aba6b6bd6815096af8e79},
intrahash = {3a37bb4472d5eeeadb5cd8280d726174},
isbn = {979-8-3503-0620-0},
keywords = {dblp},
pages = {288-290},
publisher = {IEEE},
timestamp = {2024-05-13T09:02:33.000+0200},
title = {15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm2 Bit-Cell, a 3.2GB/S Read Throughput, a 10KCycle Write Endurance and a 10-Year Retention at 105°C.},
url = {http://dblp.uni-trier.de/db/conf/isscc/isscc2024.html#HuangLCFLYCYWLYCCCWCC24},
year = 2024
}