%0 Journal Article %1 Vurgaftman2003 %A Vurgaftman, I. %A Meyer, J. R. %D 2003 %I AIP %J Journal of Applied Physics %K AlN GaN InN experiment nitrides review %N 6 %P 3675-3696 %R 10.1063/1.1600519 %T Band parameters for nitrogen-containing semiconductors %U http://link.aip.org/link/?JAP/94/3675/1 %V 94

@article{Vurgaftman2003, added-at = {2009-03-25T16:11:54.000+0100}, author = {Vurgaftman, I. and Meyer, J. R.}, biburl = {https://www.bibsonomy.org/bibtex/2b69e4ccb007f040fcaf5ee7059256915/lopusz}, description = {Band parameters for nitrogen-containing semiconductors}, doi = {10.1063/1.1600519}, interhash = {ef3040b551a67cfaf504ac8b57fa955b}, intrahash = {b69e4ccb007f040fcaf5ee7059256915}, journal = {Journal of Applied Physics}, keywords = {AlN GaN InN experiment nitrides review}, number = 6, pages = {3675-3696}, publisher = {AIP}, timestamp = {2010-08-18T14:35:42.000+0200}, title = {Band parameters for nitrogen-containing semiconductors}, url = {http://link.aip.org/link/?JAP/94/3675/1}, volume = 94, year = 2003 }