%0 Journal Article %1 KNOBELSPIES201823 %A Knobelspies, S. %A Takabayashi, A. %A Daus, A. %A Cantarella, G. %A Münzenrieder, N. %A Tröster, G. %D 2018 %J Solid-State Electronics %K myown %P 23-27 %R https://doi.org/10.1016/j.sse.2018.10.002 %T Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O2 plasma treatment %U https://www.sciencedirect.com/science/article/pii/S0038110118302995 %V 150 %X In this work, we analyze the effect of CF4/O2 plasma treatment on the contact interface between the amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) semiconductor and Titanium-Gold electrodes. First, the influence of CF4/O2 plasma treatment is evaluated using transmission line structures and compared to pure O2 and CF4 plasma, resulting in a reduction of the contact resistance RC by a factor of 24.2 compared to untreated interfaces. Subsequently, the CF4/O2 plasma treatment is integrated in the a-IGZO thin-film transistor (TFT) fabrication process flow. We achieve a reduction of the gate bias dependent RC by a factor up to 13.4, which results in an increased current drive capability. Combined with an associated channel length reduction, the effective linear field-effect mobility μlin,FE,eff is increased by up to 74.6% for the CF4/O2 plasma treated TFTs compared to untreated reference devices.

@article{KNOBELSPIES201823, abstract = {In this work, we analyze the effect of CF4/O2 plasma treatment on the contact interface between the amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) semiconductor and Titanium-Gold electrodes. First, the influence of CF4/O2 plasma treatment is evaluated using transmission line structures and compared to pure O2 and CF4 plasma, resulting in a reduction of the contact resistance RC by a factor of 24.2 compared to untreated interfaces. Subsequently, the CF4/O2 plasma treatment is integrated in the a-IGZO thin-film transistor (TFT) fabrication process flow. We achieve a reduction of the gate bias dependent RC by a factor up to 13.4, which results in an increased current drive capability. Combined with an associated channel length reduction, the effective linear field-effect mobility μlin,FE,eff is increased by up to 74.6% for the CF4/O2 plasma treated TFTs compared to untreated reference devices.}, added-at = {2023-05-22T12:04:26.000+0200}, author = {Knobelspies, S. and Takabayashi, A. and Daus, A. and Cantarella, G. and Münzenrieder, N. and Tröster, G.}, biburl = {https://www.bibsonomy.org/bibtex/2d06281735c9df6b07fc0106c85f58841/nikomu}, description = {Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O2 plasma treatment - ScienceDirect}, doi = {https://doi.org/10.1016/j.sse.2018.10.002}, interhash = {efb09bd4fb2883df9df445ffb8b9be1e}, intrahash = {d06281735c9df6b07fc0106c85f58841}, issn = {0038-1101}, journal = {Solid-State Electronics}, keywords = {myown}, pages = {23-27}, timestamp = {2023-05-22T13:09:06.000+0200}, title = {Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O2 plasma treatment}, url = {https://www.sciencedirect.com/science/article/pii/S0038110118302995}, volume = 150, year = 2018 }