%0 Journal Article %1 7119557 %A Cantarella, G. %A Münzenrieder, N. %A Petti, L. %A Vogt, C. %A Büthe, L. %A Salvatore, G. A. %A Daus, A. %A Tröster, Gerhard %D 2015 %J IEEE Electron Device Letters %K myown %N 8 %P 781-783 %R 10.1109/LED.2015.2442271 %T Flexible In–Ga–Zn–O Thin-Film Transistors on Elastomeric Substrate Bent to 2.3% Strain %U https://ieeexplore.ieee.org/document/7119557/ %V 36 %X In this letter, a photolithographic fabrication process is used to manufacture indium-gallium-zinc-oxide thin-film transistors (TFTs) with mobilities > 10 cm2/Vs directly on a 80 μm thick polydimethylsiloxane (PDMS) substrate. Once the fabrication is completed, the PDMS is detached from a silicon wafer used as carrier substrate. Due to the thermal mismatch between silicon and PDMS, the release results in a reduction of the PDMS area by 7.2%, which leads to the formation of out-of-plane wrinkles on the TFT surface. The reflattening of the wrinkles under tensile strain enables device functionality, while the TFTs are bent up to 2.3% strain. Mechanical stability of the TFTs with our wrinkled approach is shown by electrically characterizing them at bending radii down to 6 mm.

@article{7119557, abstract = {In this letter, a photolithographic fabrication process is used to manufacture indium-gallium-zinc-oxide thin-film transistors (TFTs) with mobilities > 10 cm2/Vs directly on a 80 μm thick polydimethylsiloxane (PDMS) substrate. Once the fabrication is completed, the PDMS is detached from a silicon wafer used as carrier substrate. Due to the thermal mismatch between silicon and PDMS, the release results in a reduction of the PDMS area by 7.2%, which leads to the formation of out-of-plane wrinkles on the TFT surface. The reflattening of the wrinkles under tensile strain enables device functionality, while the TFTs are bent up to 2.3% strain. Mechanical stability of the TFTs with our wrinkled approach is shown by electrically characterizing them at bending radii down to 6 mm.}, added-at = {2023-05-22T11:44:24.000+0200}, author = {Cantarella, G. and Münzenrieder, N. and Petti, L. and Vogt, C. and Büthe, L. and Salvatore, G. A. and Daus, A. and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/2efe9bb4e236f3099eb5942357aebe266/nikomu}, doi = {10.1109/LED.2015.2442271}, interhash = {f1deb73f600cf2b8f540ef756b50e34c}, intrahash = {efe9bb4e236f3099eb5942357aebe266}, issn = {1558-0563}, journal = {IEEE Electron Device Letters}, keywords = {myown}, month = aug, number = 8, pages = {781-783}, timestamp = {2023-05-22T11:44:24.000+0200}, title = {Flexible In–Ga–Zn–O Thin-Film Transistors on Elastomeric Substrate Bent to 2.3% Strain}, url = {https://ieeexplore.ieee.org/document/7119557/}, volume = 36, year = 2015 }