Bitte melden Sie sich an um selbst Rezensionen oder Kommentare zu erstellen.
Zitieren Sie diese Publikation
Mehr Zitationsstile
- bitte auswählen -
%0 Conference Paper
%1 conf/vlsic/Hunt-SchroederA18
%A Hunt-Schroeder, Eric
%A Anand, Darren
%A Fifield, John A.
%A Jacunski, Mark
%A Roberge, Michael
%A Pontius, Dale E.
%A Batson, Kevin
%A Kirihata, Toshiaki
%B VLSI Circuits
%D 2018
%I IEEE
%K dblp
%P 87-88
%T 14NM FinFET 1.5MB Embedded High-K Charge Trap Transistor One Time Programmable Memory Using Dynamic Adaptive Programming.
%U http://dblp.uni-trier.de/db/conf/vlsic/vlsic2018.html#Hunt-SchroederA18
%@ 978-1-5386-4214-6
@inproceedings{conf/vlsic/Hunt-SchroederA18,
added-at = {2022-02-25T00:00:00.000+0100},
author = {Hunt-Schroeder, Eric and Anand, Darren and Fifield, John A. and Jacunski, Mark and Roberge, Michael and Pontius, Dale E. and Batson, Kevin and Kirihata, Toshiaki},
biburl = {https://www.bibsonomy.org/bibtex/2358999281f8769c60116acec03f19d1d/dblp},
booktitle = {VLSI Circuits},
crossref = {conf/vlsic/2018},
ee = {https://doi.org/10.1109/VLSIC.2018.8502415},
interhash = {f82d86ebc5e55003f0f57739538590d1},
intrahash = {358999281f8769c60116acec03f19d1d},
isbn = {978-1-5386-4214-6},
keywords = {dblp},
pages = {87-88},
publisher = {IEEE},
timestamp = {2024-04-10T15:34:19.000+0200},
title = {14NM FinFET 1.5MB Embedded High-K Charge Trap Transistor One Time Programmable Memory Using Dynamic Adaptive Programming.},
url = {http://dblp.uni-trier.de/db/conf/vlsic/vlsic2018.html#Hunt-SchroederA18},
year = 2018
}