%0 Conference Paper %1 conf/elinfocom/RoKJ22 %A Ro, Han-Sol %A Kang, Sung Ho %A Jung, Sungyeop %B ICEIC %D 2022 %I IEEE %K dblp %P 1-3 %T The Effect of Gate Work Function on Wide Band-Gap Sn-doped α-Ga2O3 Metal-Semiconductor Field-Effect Transistors. %U http://dblp.uni-trier.de/db/conf/elinfocom/iceic2022.html#RoKJ22 %@ 978-1-6654-0934-6

@inproceedings{conf/elinfocom/RoKJ22, added-at = {2022-04-21T00:00:00.000+0200}, author = {Ro, Han-Sol and Kang, Sung Ho and Jung, Sungyeop}, biburl = {https://www.bibsonomy.org/bibtex/2a0017f9de15472f9f3eb9bb5085af3f8/dblp}, booktitle = {ICEIC}, crossref = {conf/elinfocom/2022}, ee = {https://doi.org/10.1109/ICEIC54506.2022.9748517}, interhash = {f86365f1e388642b2b2f46f56de35260}, intrahash = {a0017f9de15472f9f3eb9bb5085af3f8}, isbn = {978-1-6654-0934-6}, keywords = {dblp}, pages = {1-3}, publisher = {IEEE}, timestamp = {2024-04-09T14:56:21.000+0200}, title = {The Effect of Gate Work Function on Wide Band-Gap Sn-doped α-Ga2O3 Metal-Semiconductor Field-Effect Transistors.}, url = {http://dblp.uni-trier.de/db/conf/elinfocom/iceic2022.html#RoKJ22}, year = 2022 }