Energy levels in Si and SrTiO3-based quantum wells with charge image
effects
BRAZILIAN JOURNAL OF PHYSICS, 36 (2A):
347-349 (2006)12th Brazilian Workshop on Semiconductor Physics (BWSP-12), Sao Jode dos
Campos, BRAZIL, APR 04-08, 2005.DOI: 10.1590/S0103-97332006000300030
Abstract
In the present work we develop a theoretical study to analyze how the
image charges effects can modify the electronic properties in Si and
SrTiO3-based quantum wells. We have used the method based on the
calculation of the image charge potential by solving Poisson equation in
cylindrical coordinates. The numerical results show that the
electron-heavy hole recombination energy can be shifted by more than 200
meV due to the combination of charge image and SiO2 (SrTiO3) interface
thickness effects.