%0 Journal Article %1 WOS:000238575800030 %A Pereira, TAS %A Bezerra, MG %A Freire, JAK %A Freire, VN %A Farias, GA %C CAIXA POSTAL 66328, 05315-970 SAO PAULO, BRAZIL %D 2006 %I SOCIEDADE BRASILEIRA FISICA %J BRAZILIAN JOURNAL OF PHYSICS %K Si; SiTiO3-based levels; quantum wells} {energy %N 2A %P 347-349 %R 10.1590/S0103-97332006000300030 %T Energy levels in Si and SrTiO3-based quantum wells with charge image effects %V 36 %X In the present work we develop a theoretical study to analyze how the image charges effects can modify the electronic properties in Si and SrTiO3-based quantum wells. We have used the method based on the calculation of the image charge potential by solving Poisson equation in cylindrical coordinates. The numerical results show that the electron-heavy hole recombination energy can be shifted by more than 200 meV due to the combination of charge image and SiO2 (SrTiO3) interface thickness effects.

@article{WOS:000238575800030, abstract = {In the present work we develop a theoretical study to analyze how the image charges effects can modify the electronic properties in Si and SrTiO3-based quantum wells. We have used the method based on the calculation of the image charge potential by solving Poisson equation in cylindrical coordinates. The numerical results show that the electron-heavy hole recombination energy can be shifted by more than 200 meV due to the combination of charge image and SiO2 (SrTiO3) interface thickness effects.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {CAIXA POSTAL 66328, 05315-970 SAO PAULO, BRAZIL}, author = {Pereira, TAS and Bezerra, MG and Freire, JAK and Freire, VN and Farias, GA}, biburl = {https://www.bibsonomy.org/bibtex/20cfbb93a839ebe7ce2354683b39faac4/ppgfis_ufc_br}, doi = {10.1590/S0103-97332006000300030}, interhash = {74aa6874e01e37d995c0e14c12178bb4}, intrahash = {0cfbb93a839ebe7ce2354683b39faac4}, issn = {0103-9733}, journal = {BRAZILIAN JOURNAL OF PHYSICS}, keywords = {Si; SiTiO3-based levels; quantum wells} {energy}, note = {12th Brazilian Workshop on Semiconductor Physics (BWSP-12), Sao Jode dos Campos, BRAZIL, APR 04-08, 2005}, number = {2A}, pages = {347-349}, publisher = {SOCIEDADE BRASILEIRA FISICA}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Energy levels in Si and SrTiO3-based quantum wells with charge image effects}, tppubtype = {article}, volume = 36, year = 2006 }