Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies (VB−) in hexagonal boron nitride (hBN) and demonstrate their use as atomic scale sensors for temperature, magnetic fields and externally applied pressure. These applications are possible due to the high-spin triplet ground state and bright spin-dependent photoluminescence of the VB−. Specifically, we find that the frequency shift in optically detected magnetic resonance measurements is not only sensitive to static magnetic fields, but also to temperature and pressure changes which we relate to crystal lattice parameters. We show that spin-rich hBN films are potentially applicable as intrinsic sensors in heterostructures made of functionalized 2D materials.
Description
[2102.10890] Sub-nanoscale Temperature, Magnetic Field and Pressure sensing with Spin Centers in 2D hexagonal Boron Nitride
%0 Journal Article
%1 gottscholl2021subnanoscale
%A Gottscholl, Andreas
%A Diez, Matthias
%A Soltamov, Victor
%A Kasper, Christian
%A Sperlich, Andreas
%A Kianinia, Mehran
%A Bradac, Carlo
%A Aharonovich, Igor
%A Dyakonov, Vladimir
%D 2021
%J Nat. Commun.
%K d
%P 4480
%R 10.1038/s41467-021-24725-1
%T Spin defects in hBN as promising temperature, pressure and magnetic field quantum sensors
%V 12
%X Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies (VB−) in hexagonal boron nitride (hBN) and demonstrate their use as atomic scale sensors for temperature, magnetic fields and externally applied pressure. These applications are possible due to the high-spin triplet ground state and bright spin-dependent photoluminescence of the VB−. Specifically, we find that the frequency shift in optically detected magnetic resonance measurements is not only sensitive to static magnetic fields, but also to temperature and pressure changes which we relate to crystal lattice parameters. We show that spin-rich hBN films are potentially applicable as intrinsic sensors in heterostructures made of functionalized 2D materials.
@article{gottscholl2021subnanoscale,
abstract = {Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies (VB−) in hexagonal boron nitride (hBN) and demonstrate their use as atomic scale sensors for temperature, magnetic fields and externally applied pressure. These applications are possible due to the high-spin triplet ground state and bright spin-dependent photoluminescence of the VB−. Specifically, we find that the frequency shift in optically detected magnetic resonance measurements is not only sensitive to static magnetic fields, but also to temperature and pressure changes which we relate to crystal lattice parameters. We show that spin-rich hBN films are potentially applicable as intrinsic sensors in heterostructures made of functionalized 2D materials.},
added-at = {2021-11-15T17:14:24.000+0100},
author = {Gottscholl, Andreas and Diez, Matthias and Soltamov, Victor and Kasper, Christian and Sperlich, Andreas and Kianinia, Mehran and Bradac, Carlo and Aharonovich, Igor and Dyakonov, Vladimir},
biburl = {https://www.bibsonomy.org/bibtex/2a05300abbd4883ee1355b0173b0086c7/ctqmat},
day = 22,
description = {[2102.10890] Sub-nanoscale Temperature, Magnetic Field and Pressure sensing with Spin Centers in 2D hexagonal Boron Nitride},
doi = {10.1038/s41467-021-24725-1},
interhash = {432c33e6465ccce2b35a746a8335827f},
intrahash = {a05300abbd4883ee1355b0173b0086c7},
journal = {Nat. Commun.},
keywords = {d},
month = {07},
note = {cite arxiv:2102.10890Comment: 9 pages, 4 figures, 2 tables},
pages = 4480,
timestamp = {2024-06-28T17:08:36.000+0200},
title = {Spin defects in hBN as promising temperature, pressure and magnetic field quantum sensors},
volume = 12,
year = 2021
}