We report the growth of CuMnSb thin films by molecular beam epitaxy on InAs (001) substrates. The CuMnSb layers are compressively strained (0.6 %) due to lattice mismatch. The thin films have a ω full width at half-maximum of 7.7 arcsec according to high resolution x-ray diffraction, and a root-mean-square roughness of 0.14 nm as determined by atomic force microscopy. Magnetic and electrical properties are found to be consistent with reported values from bulk samples. We find a Néel temperature of 62 K, a Curie-Weiss temperature of −65 K, and an effective moment of 5.9μB/f.u. Transport measurements confirm the antiferromagnetic transition and show a residual resistivity at 4 K of 35μΩ cm.
Beschreibung
Phys. Rev. Materials 4, 114402 (2020) - Molecular beam epitaxy of the half-Heusler antiferromagnet CuMnSb
%0 Journal Article
%1 PhysRevMaterials.4.114402
%A Scheffler, L.
%A Gas, K.
%A Banik, S.
%A Kamp, M.
%A Knobel, J.
%A Lin, H.
%A Schumacher, C.
%A Gould, C.
%A Sawicki, M.
%A Kleinlein, J.
%A Molenkamp, L. W.
%D 2020
%I American Physical Society
%J Phys. Rev. Mater.
%K a
%N 11
%P 114402
%R 10.1103/PhysRevMaterials.4.114402
%T Molecular beam epitaxy of the half-Heusler antiferromagnet CuMnSb
%U https://link.aps.org/doi/10.1103/PhysRevMaterials.4.114402
%V 4
%X We report the growth of CuMnSb thin films by molecular beam epitaxy on InAs (001) substrates. The CuMnSb layers are compressively strained (0.6 %) due to lattice mismatch. The thin films have a ω full width at half-maximum of 7.7 arcsec according to high resolution x-ray diffraction, and a root-mean-square roughness of 0.14 nm as determined by atomic force microscopy. Magnetic and electrical properties are found to be consistent with reported values from bulk samples. We find a Néel temperature of 62 K, a Curie-Weiss temperature of −65 K, and an effective moment of 5.9μB/f.u. Transport measurements confirm the antiferromagnetic transition and show a residual resistivity at 4 K of 35μΩ cm.
@article{PhysRevMaterials.4.114402,
abstract = {We report the growth of CuMnSb thin films by molecular beam epitaxy on InAs (001) substrates. The CuMnSb layers are compressively strained (0.6 %) due to lattice mismatch. The thin films have a ω full width at half-maximum of 7.7 arcsec according to high resolution x-ray diffraction, and a root-mean-square roughness of 0.14 nm as determined by atomic force microscopy. Magnetic and electrical properties are found to be consistent with reported values from bulk samples. We find a Néel temperature of 62 K, a Curie-Weiss temperature of −65 K, and an effective moment of 5.9μB/f.u. Transport measurements confirm the antiferromagnetic transition and show a residual resistivity at 4 K of 35μΩ cm.},
added-at = {2023-08-08T16:04:45.000+0200},
author = {Scheffler, L. and Gas, K. and Banik, S. and Kamp, M. and Knobel, J. and Lin, H. and Schumacher, C. and Gould, C. and Sawicki, M. and Kleinlein, J. and Molenkamp, L. W.},
biburl = {https://www.bibsonomy.org/bibtex/23b1cd918e902caee26faafbaab922676/ctqmat},
day = 02,
description = {Phys. Rev. Materials 4, 114402 (2020) - Molecular beam epitaxy of the half-Heusler antiferromagnet CuMnSb},
doi = {10.1103/PhysRevMaterials.4.114402},
interhash = {d4270ae02c84f905aec6dbee85365c31},
intrahash = {3b1cd918e902caee26faafbaab922676},
journal = {Phys. Rev. Mater.},
keywords = {a},
month = {11},
number = 11,
numpages = {6},
pages = 114402,
publisher = {American Physical Society},
timestamp = {2023-08-08T16:04:45.000+0200},
title = {Molecular beam epitaxy of the half-Heusler antiferromagnet CuMnSb},
url = {https://link.aps.org/doi/10.1103/PhysRevMaterials.4.114402},
volume = 4,
year = 2020
}