A strong dependence of tunnel magnetoresistance (TMR) on the crystal orientation of ferromagnetic electrodes was confirmed experimentally. We studied the TMR of Fe/Al2O3/Fe50Co50 tunnel junctions with single-crystal Fe electrodes of different crystal orientations and found that the TMR ratio increased from 13\% to 42\% at 2K (8\% to 26\% at room temperature) when the crystal orientation was changed from (100) to (211). Such a TMR anisotropy could be explained in terms of the anisotropic spin polarization of Fe bulk and/or interface electronic states. The importance of the "momentum-filtering" effect of the tunnel barrier was also discussed.
%0 Journal Article
%1 yuasa:01
%A Yuasa, S.
%A Sato, T.
%A Tamura, E.
%A Suzuki, Y.
%A Yamamori, H.
%A Ando, K.
%A Katayama, T.
%D 2000
%J EPL (Europhysics Letters)
%K thickness
%N 3
%P 344-350
%T Magnetic tunnel junctions with single-crystal electrodes: A crystal anisotropy of tunnel magneto-resistance
%U http://stacks.iop.org/0295-5075/52/344
%V 52
%X A strong dependence of tunnel magnetoresistance (TMR) on the crystal orientation of ferromagnetic electrodes was confirmed experimentally. We studied the TMR of Fe/Al2O3/Fe50Co50 tunnel junctions with single-crystal Fe electrodes of different crystal orientations and found that the TMR ratio increased from 13\% to 42\% at 2K (8\% to 26\% at room temperature) when the crystal orientation was changed from (100) to (211). Such a TMR anisotropy could be explained in terms of the anisotropic spin polarization of Fe bulk and/or interface electronic states. The importance of the "momentum-filtering" effect of the tunnel barrier was also discussed.
@article{yuasa:01,
abstract = {A strong dependence of tunnel magnetoresistance (TMR) on the crystal orientation of ferromagnetic electrodes was confirmed experimentally. We studied the TMR of Fe/Al2O3/Fe50Co50 tunnel junctions with single-crystal Fe electrodes of different crystal orientations and found that the TMR ratio increased from 13\% to 42\% at 2K (8\% to 26\% at room temperature) when the crystal orientation was changed from (100) to (211). Such a TMR anisotropy could be explained in terms of the anisotropic spin polarization of Fe bulk and/or interface electronic states. The importance of the "momentum-filtering" effect of the tunnel barrier was also discussed.},
added-at = {2008-06-09T12:20:29.000+0200},
author = {Yuasa, S. and Sato, T. and Tamura, E. and Suzuki, Y. and Yamamori, H. and Ando, K. and Katayama, T.},
biburl = {https://www.bibsonomy.org/bibtex/2537d76b65e8192e376642dc7421c0d8c/srd27},
interhash = {abb23653d43a3f8645652fc09641b552},
intrahash = {537d76b65e8192e376642dc7421c0d8c},
journal = {EPL (Europhysics Letters)},
keywords = {thickness},
number = 3,
pages = {344-350},
timestamp = {2008-06-09T12:20:29.000+0200},
title = {Magnetic tunnel junctions with single-crystal electrodes: A crystal anisotropy of tunnel magneto-resistance},
url = {http://stacks.iop.org/0295-5075/52/344},
volume = 52,
year = 2000
}