On Optimization of Doping of a Hetero structure During Manufacturing of P-I-N-Diodes
E.L.Pankratov, and E.A.Bulaeva. International Journal of Computational Science, Information Technology and Control Engineering (IJCSITCE), 2 (3):
17(July 2015)
Abstract
We introduce an approach of manufacturing of a p-i-n-heterodiodes. The approach based on using a δdoped heterostructure, doping by diffusion or ion implantation of several areas of the heterostructure. After the doping the dopant and/or radiation defects have been annealed. We introduce an approach to optimize annealing of the dopant and/or radiation defects. We determine several conditions to manufacture more compact p-i-n-heterodiodes.
%0 Journal Article
%1 noauthororeditor
%A E.L.Pankratov,
%A E.A.Bulaeva,
%D 2015
%J International Journal of Computational Science, Information Technology and Control Engineering (IJCSITCE)
%K analytical approach decreasing dimensions for manufacturing modelling of optimization p-i-n-diodes p-i-n-heterodiodes δ-doping
%N 3
%P 17
%T On Optimization of Doping of a Hetero structure During Manufacturing of P-I-N-Diodes
%U https://airccse.com/ijcsitce/papers/2315ijcsitce01.pdf
%V 2
%X We introduce an approach of manufacturing of a p-i-n-heterodiodes. The approach based on using a δdoped heterostructure, doping by diffusion or ion implantation of several areas of the heterostructure. After the doping the dopant and/or radiation defects have been annealed. We introduce an approach to optimize annealing of the dopant and/or radiation defects. We determine several conditions to manufacture more compact p-i-n-heterodiodes.
@article{noauthororeditor,
abstract = {We introduce an approach of manufacturing of a p-i-n-heterodiodes. The approach based on using a δdoped heterostructure, doping by diffusion or ion implantation of several areas of the heterostructure. After the doping the dopant and/or radiation defects have been annealed. We introduce an approach to optimize annealing of the dopant and/or radiation defects. We determine several conditions to manufacture more compact p-i-n-heterodiodes.},
added-at = {2018-11-16T06:11:56.000+0100},
author = {E.L.Pankratov and E.A.Bulaeva},
biburl = {https://www.bibsonomy.org/bibtex/2594268a6ff07772e66eeafc17ad92055/ashvath},
interhash = {8e5e535c263fa0248e0fbb402d4f9dc6},
intrahash = {594268a6ff07772e66eeafc17ad92055},
journal = {International Journal of Computational Science, Information Technology and Control Engineering (IJCSITCE)},
keywords = {analytical approach decreasing dimensions for manufacturing modelling of optimization p-i-n-diodes p-i-n-heterodiodes δ-doping},
month = {july},
number = 3,
pages = 17,
timestamp = {2018-11-16T06:15:51.000+0100},
title = {On Optimization of Doping of a Hetero structure During Manufacturing of P-I-N-Diodes },
url = {https://airccse.com/ijcsitce/papers/2315ijcsitce01.pdf},
volume = 2,
year = 2015
}