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Computational analysis of rupture-oxide phase-change memory cells

, , , , and . IEEE Transactions on Electron Devices, 60 (5): 1649--1655 (2013)
DOI: 10.1109/TED.2013.2255130

Abstract

The potential of rupture-oxide mushroom phase-change memory cells is assessed through 2-D finite element analysis using electro-thermal models with temperature-dependent material parameters, coupled with a circuit model for access transistors. The mushroom cell structure used for the simulations consists of a 100-nm thick layer separated from a 20-nm wide TiN bottom heater by a 3-nm thick rupture-oxide layer. The ruptured oxide is modeled as a conductive filament through the oxide layer at the center of the heater. The effects of supply voltage, gate voltage, access transistor width, filament diameter and resistivity are studied using a read/…(more)

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