On Optimization of Manufacturing Planar Double-Base Heterotransistors To Decrease Their Dimensions
E. Pankratov. International Journal of Applied Control, Electrical and Electronics Engineering (IJACEEE), 3 (4):
13-24(November 2015)
Abstract
In this paper we consider an approach of manufacturing of double-base hetero transistors to decrease their
dimensions. Framework the approach it should be manufactured a hetero structure with specific configuration. Farther it is necessary to dope certain areas of the hetero structure by diffusion or by ion implantation. After finishing of the doping process the dopant and/or radiation defects should be annealed. We consider an approach of optimization of dopant and/or radiation defects for manufacturing more compact double base hetero transistors.
%0 Journal Article
%1 pankratovoptimization
%A Pankratov, E.L.
%D 2015
%E Grigoryan, Artyom
%J International Journal of Applied Control, Electrical and Electronics Engineering (IJACEEE)
%K Field-effect heterotransistors
%N 4
%P 13-24
%T On Optimization of Manufacturing Planar Double-Base Heterotransistors To Decrease Their Dimensions
%U https://airccse.com/ijaceee/papers/3415ijaceee02.pdf
%V 3
%X In this paper we consider an approach of manufacturing of double-base hetero transistors to decrease their
dimensions. Framework the approach it should be manufactured a hetero structure with specific configuration. Farther it is necessary to dope certain areas of the hetero structure by diffusion or by ion implantation. After finishing of the doping process the dopant and/or radiation defects should be annealed. We consider an approach of optimization of dopant and/or radiation defects for manufacturing more compact double base hetero transistors.
@article{pankratovoptimization,
abstract = {In this paper we consider an approach of manufacturing of double-base hetero transistors to decrease their
dimensions. Framework the approach it should be manufactured a hetero structure with specific configuration. Farther it is necessary to dope certain areas of the hetero structure by diffusion or by ion implantation. After finishing of the doping process the dopant and/or radiation defects should be annealed. We consider an approach of optimization of dopant and/or radiation defects for manufacturing more compact double base hetero transistors. },
added-at = {2019-11-06T12:42:55.000+0100},
author = {Pankratov, E.L.},
biburl = {https://www.bibsonomy.org/bibtex/2898e1d36ea7762ca97faa48acd0df8f0/electical12345},
editor = {Grigoryan, Artyom},
interhash = {eac3302ab756a10f668e2831325efc21},
intrahash = {898e1d36ea7762ca97faa48acd0df8f0},
issn = {2394-0816},
journal = {International Journal of Applied Control, Electrical and Electronics Engineering (IJACEEE) },
keywords = {Field-effect heterotransistors},
language = {English},
month = nov,
number = 4,
pages = {13-24},
timestamp = {2019-11-06T12:42:55.000+0100},
title = {On Optimization of Manufacturing Planar Double-Base Heterotransistors To Decrease Their Dimensions},
url = {https://airccse.com/ijaceee/papers/3415ijaceee02.pdf},
volume = 3,
year = 2015
}