Simulation of AlGaN/Si and InN/Si ELECTRIC
–DEVICES
Z. Allam. International Journal of Recent advances in Physics (IJRAP), 2 (2):
1-10(2013/05 2013)
Zusammenfassung
In this work, efficient solar-blind metal-semiconductor photodetectors grown on Si (111) by
molecular beam epitaxy are reported. Growth details are described,the comparison enters the
properties electric of InN/Si and AlGaN/Si photodectors with 0.2 µm of AlGaN and InN layers.
Modeling and simulation were performed by using ATLAS-TCAD simulator. Energy band
diagram, doping profile, conduction current density,I-V caracteristic , internal potential and
electric field were performed.
%0 Journal Article
%1 allam2013simulation
%A Allam, Zehor
%D 2013
%J International Journal of Recent advances in Physics (IJRAP)
%K physics
%N 2
%P 1-10
%T Simulation of AlGaN/Si and InN/Si ELECTRIC
–DEVICES
%U file:///C:/Users/NnN/Pictures/2213ijrap03.pdf
%V 2
%X In this work, efficient solar-blind metal-semiconductor photodetectors grown on Si (111) by
molecular beam epitaxy are reported. Growth details are described,the comparison enters the
properties electric of InN/Si and AlGaN/Si photodectors with 0.2 µm of AlGaN and InN layers.
Modeling and simulation were performed by using ATLAS-TCAD simulator. Energy band
diagram, doping profile, conduction current density,I-V caracteristic , internal potential and
electric field were performed.
@article{allam2013simulation,
abstract = {In this work, efficient solar-blind metal-semiconductor photodetectors grown on Si (111) by
molecular beam epitaxy are reported. Growth details are described,the comparison enters the
properties electric of InN/Si and AlGaN/Si photodectors with 0.2 µm of AlGaN and InN layers.
Modeling and simulation were performed by using ATLAS-TCAD simulator. Energy band
diagram, doping profile, conduction current density,I-V caracteristic , internal potential and
electric field were performed. },
added-at = {2018-03-06T06:45:55.000+0100},
author = {Allam, Zehor},
biburl = {https://www.bibsonomy.org/bibtex/2e5ea05b902b5394aa6427ca37c17b4d5/johnkenadi1985.},
interhash = {e092dabbb92378a5ae99dc3b0eb97670},
intrahash = {e5ea05b902b5394aa6427ca37c17b4d5},
journal = {International Journal of Recent advances in Physics (IJRAP) },
keywords = {physics},
month = {2013/05},
number = 2,
pages = {1-10},
timestamp = {2018-03-06T06:45:55.000+0100},
title = {Simulation of AlGaN/Si and InN/Si ELECTRIC
–DEVICES},
url = {file:///C:/Users/NnN/Pictures/2213ijrap03.pdf},
volume = 2,
year = 2013
}