In this work, we investigate the transverse transport properties of
few-layers MoS(2)using a Conductive Atomic Force Microscopy based
technique. We find that the system changes between a low-force regime,
characterized by a nearly-ideal contact between the MoS(2)flake and the
substrate, and a high-force regime, for which this contact starts to
become highly non-ideal. We propose a 3-diode model that effectively
describes the current-voltage characteristics of few-layers MoS2. From
this model, we estimate how fast the energy gaps of two-dimensional
MoS(2)materials change as a function of the applied force. From our
analysis, we estimate that MoS2-Au Schottky barrier heights change at
the rate of 0.21, 0.23, and 0.78 meV nN(-1)for the few-layers,
three-layers, and two-layers MoS2, respectively. Our work opens up new
possibilities of investigating and controlling the electronic properties
of 2D semiconducting materials.
%0 Journal Article
%1 WOS:000573289400001
%A de Araujo, Daniel B
%A Almeida, Rodrigo Q
%A Gadelha, Andreij C
%A Rezende, Natalia P
%A Salomao, F C C S
%A Silva, F W N
%A Campos, Leonardo C
%A Barros, Eduardo B
%C TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
%D 2020
%I IOP PUBLISHING LTD
%J 2D MATERIALS
%K (AFM); (CAFM)} AFM Atomic Conductive Force Microscopy MoS2; electronic engineering; semiconductor; strain transport; {2D
%N 4
%R 10.1088/2053-1583/aba5cb
%T Controlling the electronic bands of a 2D semiconductor by force
microscopy
%V 7
%X In this work, we investigate the transverse transport properties of
few-layers MoS(2)using a Conductive Atomic Force Microscopy based
technique. We find that the system changes between a low-force regime,
characterized by a nearly-ideal contact between the MoS(2)flake and the
substrate, and a high-force regime, for which this contact starts to
become highly non-ideal. We propose a 3-diode model that effectively
describes the current-voltage characteristics of few-layers MoS2. From
this model, we estimate how fast the energy gaps of two-dimensional
MoS(2)materials change as a function of the applied force. From our
analysis, we estimate that MoS2-Au Schottky barrier heights change at
the rate of 0.21, 0.23, and 0.78 meV nN(-1)for the few-layers,
three-layers, and two-layers MoS2, respectively. Our work opens up new
possibilities of investigating and controlling the electronic properties
of 2D semiconducting materials.
@article{WOS:000573289400001,
abstract = {In this work, we investigate the transverse transport properties of
few-layers MoS(2)using a Conductive Atomic Force Microscopy based
technique. We find that the system changes between a low-force regime,
characterized by a nearly-ideal contact between the MoS(2)flake and the
substrate, and a high-force regime, for which this contact starts to
become highly non-ideal. We propose a 3-diode model that effectively
describes the current-voltage characteristics of few-layers MoS2. From
this model, we estimate how fast the energy gaps of two-dimensional
MoS(2)materials change as a function of the applied force. From our
analysis, we estimate that MoS2-Au Schottky barrier heights change at
the rate of 0.21, 0.23, and 0.78 meV nN(-1)for the few-layers,
three-layers, and two-layers MoS2, respectively. Our work opens up new
possibilities of investigating and controlling the electronic properties
of 2D semiconducting materials.},
added-at = {2022-05-23T20:00:14.000+0200},
address = {TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND},
author = {de Araujo, Daniel B and Almeida, Rodrigo Q and Gadelha, Andreij C and Rezende, Natalia P and Salomao, F C C S and Silva, F W N and Campos, Leonardo C and Barros, Eduardo B},
biburl = {https://www.bibsonomy.org/bibtex/2ed46b835a4130deca62679c974f4e259/ppgfis_ufc_br},
doi = {10.1088/2053-1583/aba5cb},
interhash = {40bdf2364e2108ed4595685f7756b8b7},
intrahash = {ed46b835a4130deca62679c974f4e259},
issn = {2053-1583},
journal = {2D MATERIALS},
keywords = {(AFM); (CAFM)} AFM Atomic Conductive Force Microscopy MoS2; electronic engineering; semiconductor; strain transport; {2D},
number = 4,
publisher = {IOP PUBLISHING LTD},
pubstate = {published},
timestamp = {2022-05-23T20:00:14.000+0200},
title = {Controlling the electronic bands of a 2D semiconductor by force
microscopy},
tppubtype = {article},
volume = 7,
year = 2020
}