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BaFe12O19 thin film grown by an aqueous sol-gel process

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MICROELECTRONICS JOURNAL, 34 (5-8): 565-567 (2003)Conference on Low Dimensional Structures and Devices (LDSD), FORTALEZA, BRAZIL, DEC 08-13, 2002.
DOI: 10.1016/S0026-2692(03)00049-1

Аннотация

In this communication we present a new sol-gel route to obtain high quality BaFe12O19 thin films. X-ray analysis confirmed the crystal structure with a crystal size of 32 run. Atomic force microscopy images determined the film thickness to be around 250 nm and a roughness factor of less than 40 nm where the grain size averaged around 150 nm. SQUID magnetometer data shows a magnetic behavior similar to films grown by other techniques, namely, a coercive field (H-c = 4 kOe), a normalized remanence close to 0.6 and saturation field of 15 kOe and M-s = 80 emu/cm(3). (C) 2003 Published by Elsevier Science Ltd.

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