Zusammenfassung
In this work, the excitonic properties of ZnSe/ZnSxSe1-x strained
superlattices (SLs) and quantum wells (QWs) are studied taking into
account spin-orbit splitting, strain, and interfacial effects. The
broadening of excitonic related photoluminescence (PL) spectra due to
the existence of gradual interfaces with thickness of 10 Angstrom is
shown to be of the order of 30 meV for a 30 Angstrom ZnSe/ZnS0.18Se0.82
QW. (C) 2004 Elsevier B.V. All rights reserved.
Nutzer