%0 Conference Paper %1 conf/ccwc/KhosraviCFK24 %A Khosravi, Hossein %A Carmona-Galán, Ricardo %A Fernández-Berni, Jorge %A Kandalaft, Nabeeh %B CCWC %D 2024 %E Paul, Rajashree %E Kundu, Arpita %I IEEE %K dblp %P 728-733 %T A novel 10T SRAM bit-cell with high static noise margin and low power consumption for binary In-Memory Computing. %U http://dblp.uni-trier.de/db/conf/ccwc/ccwc2024.html#KhosraviCFK24 %@ 979-8-3503-6013-4

@inproceedings{conf/ccwc/KhosraviCFK24, added-at = {2024-05-07T00:00:00.000+0200}, author = {Khosravi, Hossein and Carmona-Galán, Ricardo and Fernández-Berni, Jorge and Kandalaft, Nabeeh}, biburl = {https://www.bibsonomy.org/bibtex/20c431e09025bb242cb7c6d83832a0925/dblp}, booktitle = {CCWC}, crossref = {conf/ccwc/2024}, editor = {Paul, Rajashree and Kundu, Arpita}, ee = {https://doi.org/10.1109/CCWC60891.2024.10427792}, interhash = {3f4b9effad3c11308fba7cd4bf44ee1e}, intrahash = {0c431e09025bb242cb7c6d83832a0925}, isbn = {979-8-3503-6013-4}, keywords = {dblp}, pages = {728-733}, publisher = {IEEE}, timestamp = {2024-05-13T09:30:17.000+0200}, title = {A novel 10T SRAM bit-cell with high static noise margin and low power consumption for binary In-Memory Computing.}, url = {http://dblp.uni-trier.de/db/conf/ccwc/ccwc2024.html#KhosraviCFK24}, year = 2024 }