%0 Journal Article %1 Donnelly2006 %A Donnelly, Joseph P. %A Duerr, Erik K. %A McIntosh, K. Alex %A Dauler, Eric A. %A Oakley, Douglas C. %A Groves, Steven H. %A Vineis, Christopher J. %A Mahoney, Leonard J. %A Molvar, Karen M. %A Hopman, Pablo I. %A Jensen, Katharine Estelle %A Smith, Gary M. %A Verghese, Simon %A Shaver, David C. %C 445 HOES LANE, PISCATAWAY, NJ 08855 USA %D 2006 %I IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC %J IEEE JOURNAL OF QUANTUM ELECTRONICS %K Geiger-mode avalanche detection device modeling; photodiodes; semiconductor single-photon %N 7-8 %P 797-809 %R 10.1109/JQE.2006.877300 %T Design considerations for 1.06-mu m InGaAsP-InP Geiger-mode avalanche photodiodes %V 42 %X For Geiger-mode avalanche photodiodes, the two most important performance metrics for most applications are dark count rate (DCR) and photon detection efficiency (PDE). In 1.06-mu m separate-absorber-avalanche (multiplier) InP-based devices, the primary sources of dark counts are tunneling through defect levels in the InP avalanche region and thermal generation in the InGaAsP absorber region. PDE is the probability that a photon will be absorbed (quantum efficiency) times the probability that the electron-hole pair generated will actually cause an avalanche. A device model based on experimental data that can simultaneously predict DCR and PDE as a function of overbias and temperature is presented. This model has been found useful in predicting changes in performance as various device parameters, such as avalanche layer thickness, are modified. This has led to designs that are capable simultaneously of low DCR and high PDE.

@article{Donnelly2006, abstract = {For Geiger-mode avalanche photodiodes, the two most important performance metrics for most applications are dark count rate (DCR) and photon detection efficiency (PDE). In 1.06-mu m separate-absorber-avalanche (multiplier) InP-based devices, the primary sources of dark counts are tunneling through defect levels in the InP avalanche region and thermal generation in the InGaAsP absorber region. PDE is the probability that a photon will be absorbed (quantum efficiency) times the probability that the electron-hole pair generated will actually cause an avalanche. A device model based on experimental data that can simultaneously predict DCR and PDE as a function of overbias and temperature is presented. This model has been found useful in predicting changes in performance as various device parameters, such as avalanche layer thickness, are modified. This has led to designs that are capable simultaneously of low DCR and high PDE.}, added-at = {2009-09-04T22:06:29.000+0200}, address = {445 HOES LANE, PISCATAWAY, NJ 08855 USA}, affiliation = {Donnelly, JP (Reprint Author), MIT, Lincoln Lab, Lexington, MA 02420 USA. MIT, Lincoln Lab, Lexington, MA 02420 USA.}, author = {Donnelly, Joseph P. and Duerr, Erik K. and McIntosh, K. Alex and Dauler, Eric A. and Oakley, Douglas C. and Groves, Steven H. and Vineis, Christopher J. and Mahoney, Leonard J. and Molvar, Karen M. and Hopman, Pablo I. and Jensen, Katharine Estelle and Smith, Gary M. and Verghese, Simon and Shaver, David C.}, author-email = {Donnelly@11.mit.edu}, biburl = {https://www.bibsonomy.org/bibtex/2e20f2a8ef02d2439d6e8daf50f8dc66d/scotbrad}, doc-delivery-number = {068WH}, doi = {10.1109/JQE.2006.877300}, file = {[Donnelly2006] Design Considerations for 1.06um InGaAsP-InP Geiger-Mode APDs.pdf:APD\\[Donnelly2006] Design Considerations for 1.06um InGaAsP-InP Geiger-Mode APDs.pdf:PDF}, groups = {public}, interhash = {4e4b20924006022c90d356b81e1dbbfd}, intrahash = {e20f2a8ef02d2439d6e8daf50f8dc66d}, issn = {0018-9197}, journal = {IEEE JOURNAL OF QUANTUM ELECTRONICS}, journal-iso = {IEEE J. Quantum Electron.}, keywords = {Geiger-mode avalanche detection device modeling; photodiodes; semiconductor single-photon}, keywords-plus = {IMPACT IONIZATION COEFFICIENTS; PHOTO-DIODES; MU-M; NOISE; GAIN; ELECTROABSORPTION; SEMICONDUCTORS; PROBABILITY; ELECTRONS; HOLES}, language = {English}, month = {JUL-AUG}, number = {7-8}, number-of-cited-references = {37}, pages = {797-809}, publisher = {IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC}, subject-category = {Engineering, Electrical \& Electronic; Physics, Applied}, times-cited = {22}, timestamp = {2009-09-04T22:06:41.000+0200}, title = {Design considerations for 1.06-mu m InGaAsP-InP Geiger-mode avalanche photodiodes}, type = {Article}, unique-id = {ISI:000239404700025}, volume = 42, year = 2006 }