%0 Journal Article %1 PIP:PIP2354 %A Park, Se Jin %A Cho, Jin Woo %A Lee, Joong Kee %A Shin, Keeshik %A Kim, Ji-Hyun %A Min, Byoung Koun %D 2014 %J Progress in Photovoltaics: Research and Applications %K aempl %N 1 %P 122--128 %R 10.1002/pip.2354 %T Solution processed high band-gap CuInGaS2 thin film for solar cell applications %U http://dx.doi.org/10.1002/pip.2354 %V 22 %X A high band-gap (~1.55 eV) chalcopyrite compound film (CuInGaS2) was synthesized by a precursor solution-based coating method with an oxidation and a sulfurization heat treatment process. The film revealed two distinct morphologies: a densely packed bulk layer and a rough surface layer. We found that the rough surface is attributed to the formation of Ga deficient CuInGaS2 crystallites. Because of the high band-gap optical property of the CuInGaS2 absorber film, a solar cell device with this film showed a relatively high open circuit voltage (~787 mV) with a power conversion efficiency of 8.28% under standard irradiation conditions. Copyright © 2013 John Wiley & Sons, Ltd.

@article{PIP:PIP2354, abstract = {A high band-gap (~1.55 eV) chalcopyrite compound film (CuInGaS2) was synthesized by a precursor solution-based coating method with an oxidation and a sulfurization heat treatment process. The film revealed two distinct morphologies: a densely packed bulk layer and a rough surface layer. We found that the rough surface is attributed to the formation of Ga deficient CuInGaS2 crystallites. Because of the high band-gap optical property of the CuInGaS2 absorber film, a solar cell device with this film showed a relatively high open circuit voltage (~787 mV) with a power conversion efficiency of 8.28% under standard irradiation conditions. Copyright © 2013 John Wiley & Sons, Ltd.}, added-at = {2015-10-08T05:45:25.000+0200}, author = {Park, Se Jin and Cho, Jin Woo and Lee, Joong Kee and Shin, Keeshik and Kim, Ji-Hyun and Min, Byoung Koun}, biburl = {https://www.bibsonomy.org/bibtex/2eeda0d0c3ac9dc2872f55176e40166e4/l1th1um}, description = {Solution processed high band-gap CuInGaS2 thin film for solar cell applications - Park - 2013 - Progress in Photovoltaics: Research and Applications - Wiley Online Library}, doi = {10.1002/pip.2354}, interhash = {60f96578f6d3919d0343fbde6389cfb1}, intrahash = {eeda0d0c3ac9dc2872f55176e40166e4}, issn = {1099-159X}, journal = {Progress in Photovoltaics: Research and Applications}, keywords = {aempl}, number = 1, pages = {122--128}, timestamp = {2015-10-08T05:45:25.000+0200}, title = {Solution processed high band-gap CuInGaS2 thin film for solar cell applications}, url = {http://dx.doi.org/10.1002/pip.2354}, volume = 22, year = 2014 }