Abstract
A model of the growth and morphology of Ti3SiC2 grains is presented
in this work. In the growth of Ti3SiC2 grains,
Ti6C octahedron can be recognized as an integrated growth unit and
the linking modes of Ti6C octahedra (such as
sharing planes, edges, or apexes) have strong in?uence on the growth
behavior and morphology of Ti3SiC2. Some
experimental phenomena such as preferred orientation of the 1 12
0 plane in CVD method, and some hexagonal
sections in the morphology of the fractured surface can be well interpreted
using our model.
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