Abstract
We calculate the confined exciton energy of zincblende GaN/BN
cylindrical nanowires using a two-parameter variational approach within
the effective mass approximation. Feasibility of light emission in the
300-700 nm range is attained, depending both on the nanowire radius and
the graded interface thickness. It is shown that in actual zincblende
GaN/BN nanowire samples, the existence of non-abrupt interfaces can blue
shift the exciton recombination energy up to similar to100 meV for
non-abrupt interface thickness of just a few monolayers. (C) 2004
Published by Elsevier B.V.
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