%0 Journal Article %1 0953-8984-18-3-012 %A Tiusan, C %A Sicot, M %A Faure-Vincent, J %A Hehn, M %A Bellouard, C %A Montaigne, F %A Andrieu, S %A Schuhl, A %D 2006 %J Journal of Physics: Condensed Matter %K imported %N 3 %P 941-956 %T Static and dynamic aspects of spin tunnelling in crystalline magnetic tunnel junctions %U http://stacks.iop.org/0953-8984/18/941 %V 18 %X Single-crystal magnetic tunnel junctions employing bcc (100) Fe electrodes and MgO(100) insulating barrier are elaborated by molecular beam epitaxy. The magneto-transport properties are investigated in two extreme regimes. First, for extremely small MgO thickness, we show that the equilibrium tunnel transport in Fe/MgO/Fe systems leads to antiferromagnetic interactions, mediated by the tunnelling of the minority spin interfacial resonance state. Second, for large MgO barrier thickness, the tunnel transport validates specific spin filtering effects in terms of symmetry of the electronic Bloch function and symmetry-dependent wavefunction attenuation in the single-crystal barrier. Within this framework, we present giant tunnel magnetoresistive effects at room temperature (125-160\%). Moreover, we illustrate that the interfacial chemical and electronic structure plays a crucial role in the spin filtering. We point out imperfect filtering effects and a strong implication of the minority surface state of Fe on the low voltage variation of tunnel magnetoresistance. The insertion of carbon impurities at the Fe/MgO interface changes radically the voltage response of the tunnel magnetoresistance and activates a resonant tunnelling mechanism via the interfacial resonance state.

@article{0953-8984-18-3-012, abstract = {Single-crystal magnetic tunnel junctions employing bcc (100) Fe electrodes and MgO(100) insulating barrier are elaborated by molecular beam epitaxy. The magneto-transport properties are investigated in two extreme regimes. First, for extremely small MgO thickness, we show that the equilibrium tunnel transport in Fe/MgO/Fe systems leads to antiferromagnetic interactions, mediated by the tunnelling of the minority spin interfacial resonance state. Second, for large MgO barrier thickness, the tunnel transport validates specific spin filtering effects in terms of symmetry of the electronic Bloch function and symmetry-dependent wavefunction attenuation in the single-crystal barrier. Within this framework, we present giant tunnel magnetoresistive effects at room temperature (125-160\%). Moreover, we illustrate that the interfacial chemical and electronic structure plays a crucial role in the spin filtering. We point out imperfect filtering effects and a strong implication of the minority surface state of Fe on the low voltage variation of tunnel magnetoresistance. The insertion of carbon impurities at the Fe/MgO interface changes radically the voltage response of the tunnel magnetoresistance and activates a resonant tunnelling mechanism via the interfacial resonance state.}, added-at = {2009-07-31T21:11:01.000+0200}, author = {Tiusan, C and Sicot, M and Faure-Vincent, J and Hehn, M and Bellouard, C and Montaigne, F and Andrieu, S and Schuhl, A}, biburl = {https://www.bibsonomy.org/bibtex/286674799004c49173eec0770fe163a35/kdbel}, description = {Static and dynamic aspects of spin tunnelling in crystalline magnetic tunnel junctions}, interhash = {9833c5c8b3e85e1c1d36106dc5731879}, intrahash = {86674799004c49173eec0770fe163a35}, journal = {Journal of Physics: Condensed Matter}, keywords = {imported}, number = 3, pages = {941-956}, timestamp = {2009-07-31T21:11:01.000+0200}, title = {Static and dynamic aspects of spin tunnelling in crystalline magnetic tunnel junctions}, url = {http://stacks.iop.org/0953-8984/18/941}, volume = 18, year = 2006 }