Inproceedings,
13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate.
D. Kim, H. Kim, S. Yun, Y. Song, J. Kim, S. Joe, K. Kang, J. Jang, H. Yoon, K. Lee, M. Kim, J. Kwon, J. Jo, S. Park, J. Park, J. Cho, S. Park, G. Kim, J. Bang, H. Kim, J. Park, D. Lee, S. Lee, H. Jang, H. Lee, D. Shin, J. Park, J. Kim, J. Kim, K. Jang, I. Park, S. Moon, M. Choi, P. Kwak, J. Park, Y. Choi, S. Kim, S. Lee, D. Kang, J. Lim, D. Byeon, K. Song, J. Choi, S. Hwang, and J. Jeong.ISSCC, page 218-220. IEEE, (2020)
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- conf/isscc/KimKYSKJKJYLKKJ20
- entry type
- inproceedings
- booktitle
- ISSCC
- year
- 2020
- pages
- 218-220
- publisher
- IEEE
- crossref
- conf/isscc/2020
- ee
- https://doi.org/10.1109/ISSCC19947.2020.9063053
- isbn
- 978-1-7281-3205-1
- url
- http://dblp.uni-trier.de/db/conf/isscc/isscc2020.html#KimKYSKJKJYLKKJ20
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%1 conf/isscc/KimKYSKJKJYLKKJ20
%A Kim, Doo-Hyun
%A Kim, Hyunggon
%A Yun, Sung-Won
%A Song, Youngsun
%A Kim, Jisu
%A Joe, Sung-Min
%A Kang, Kyung-Hwa
%A Jang, Joonsuc
%A Yoon, Hyun-Jun
%A Lee, Kangbin
%A Kim, Minseok
%A Kwon, Joonsoo
%A Jo, Jonghoo
%A Park, Sehwan
%A Park, Jiyoon
%A Cho, Jisoo
%A Park, Sohyun
%A Kim, Garam
%A Bang, Jinbae
%A Kim, Heejin
%A Park, Jongeun
%A Lee, Deokwoo
%A Lee, Seonyong
%A Jang, Hwajun
%A Lee, Hanjun
%A Shin, Donghyun
%A Park, Jungmin
%A Kim, Jungkwan
%A Kim, Jongmin
%A Jang, Kichang
%A Park, II Han
%A Moon, Seung Hyun
%A Choi, Myung-Hoon
%A Kwak, Pansuk
%A Park, Joo-Yong
%A Choi, Youngdon
%A Kim, Sanglok
%A Lee, Seungjae
%A Kang, Dongku
%A Lim, Jeong-Don
%A Byeon, Dae-Seok
%A Song, Ki-Whan
%A Choi, Jung-Hwan
%A Hwang, Sangjoon
%A Jeong, Jaeheon
%B ISSCC
%D 2020
%I IEEE
%K dblp
%P 218-220
%T 13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate.
%U http://dblp.uni-trier.de/db/conf/isscc/isscc2020.html#KimKYSKJKJYLKKJ20
%@ 978-1-7281-3205-1
@inproceedings{conf/isscc/KimKYSKJKJYLKKJ20,
added-at = {2023-10-04T00:00:00.000+0200},
author = {Kim, Doo-Hyun and Kim, Hyunggon and Yun, Sung-Won and Song, Youngsun and Kim, Jisu and Joe, Sung-Min and Kang, Kyung-Hwa and Jang, Joonsuc and Yoon, Hyun-Jun and Lee, Kangbin and Kim, Minseok and Kwon, Joonsoo and Jo, Jonghoo and Park, Sehwan and Park, Jiyoon and Cho, Jisoo and Park, Sohyun and Kim, Garam and Bang, Jinbae and Kim, Heejin and Park, Jongeun and Lee, Deokwoo and Lee, Seonyong and Jang, Hwajun and Lee, Hanjun and Shin, Donghyun and Park, Jungmin and Kim, Jungkwan and Kim, Jongmin and Jang, Kichang and Park, II Han and Moon, Seung Hyun and Choi, Myung-Hoon and Kwak, Pansuk and Park, Joo-Yong and Choi, Youngdon and Kim, Sanglok and Lee, Seungjae and Kang, Dongku and Lim, Jeong-Don and Byeon, Dae-Seok and Song, Ki-Whan and Choi, Jung-Hwan and Hwang, Sangjoon and Jeong, Jaeheon},
biburl = {https://www.bibsonomy.org/bibtex/2a7190191ca1a0d0df5111d8498b91a01/dblp},
booktitle = {ISSCC},
crossref = {conf/isscc/2020},
ee = {https://doi.org/10.1109/ISSCC19947.2020.9063053},
interhash = {9f6e6db0bdde09bb8f465c8943281ff9},
intrahash = {a7190191ca1a0d0df5111d8498b91a01},
isbn = {978-1-7281-3205-1},
keywords = {dblp},
pages = {218-220},
publisher = {IEEE},
timestamp = {2024-04-10T11:04:13.000+0200},
title = {13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate.},
url = {http://dblp.uni-trier.de/db/conf/isscc/isscc2020.html#KimKYSKJKJYLKKJ20},
year = 2020
}