Abstract
High lattice temperature effects on the electron transport transient in
the 4H-SiC c-parallel direction are studied within a single equivalent
isotropic valley picture in the momentum and energy relaxation time
approximation. The ultrafast transport regime occurs in a subpicosecond
scale (< 0.2 ps), during which an overshoot in the electron drift
velocity starts to be evident for high electric fields (greater than or
similar to 60 kV/cm), depending on the lattice temperature. An increase
of the electric field strength shifts the overshoot peak of the electron
drift velocity to an earlier time. For a strong enough electric field, a
higher lattice temperature cannot eliminate the electron drift overshoot
effect, but can reduce it considerably due to a stronger electron-phonon
scattering. (C) 2007 American Institute of Physics.
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