A 1 × 400 Backside-Illuminated SPAD Sensor With 49.7 ps Resolution, 30 pJ/Sample TDCs Fabricated in 3D CMOS Technology for Near-Infrared Optical Tomography.
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%0 Journal Article
%1 journals/jssc/PaviaSLWC15
%A Pavia, Juan Mata
%A Scandini, Mario
%A Lindner, Scott
%A Wolf, Martin
%A Charbon, Edoardo
%D 2015
%J IEEE J. Solid State Circuits
%K
%N 10
%P 2406-2418
%T A 1 × 400 Backside-Illuminated SPAD Sensor With 49.7 ps Resolution, 30 pJ/Sample TDCs Fabricated in 3D CMOS Technology for Near-Infrared Optical Tomography.
%U http://dblp.uni-trier.de/db/journals/jssc/jssc50.html#PaviaSLWC15
%V 50
@article{journals/jssc/PaviaSLWC15,
added-at = {2023-12-13T07:36:32.000+0100},
author = {Pavia, Juan Mata and Scandini, Mario and Lindner, Scott and Wolf, Martin and Charbon, Edoardo},
biburl = {https://www.bibsonomy.org/bibtex/2bf6ad32d9c7e41d6ab0b44e33beeaffc/admin},
ee = {https://doi.org/10.1109/JSSC.2015.2467170},
interhash = {bb154e085455486b7924b9abfcd31aa8},
intrahash = {bf6ad32d9c7e41d6ab0b44e33beeaffc},
journal = {IEEE J. Solid State Circuits},
keywords = {},
number = 10,
pages = {2406-2418},
timestamp = {2023-12-13T07:36:32.000+0100},
title = {A 1 × 400 Backside-Illuminated SPAD Sensor With 49.7 ps Resolution, 30 pJ/Sample TDCs Fabricated in 3D CMOS Technology for Near-Infrared Optical Tomography.},
url = {http://dblp.uni-trier.de/db/journals/jssc/jssc50.html#PaviaSLWC15},
volume = 50,
year = 2015
}
