Inproceedings,
Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs.
D. Bisi, A. Stocco, M. Meneghini, F. Rampazzo, A. Cester, G. Meneghesso, and E. Zanoni.ESSDERC, page 389-392. IEEE, (2014)
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- conf/essderc/BisiSMRCMZ14
- entry type
- inproceedings
- booktitle
- ESSDERC
- year
- 2014
- pages
- 389-392
- publisher
- IEEE
- crossref
- conf/essderc/2014
- ee
- https://doi.org/10.1109/ESSDERC.2014.6948842
- isbn
- 978-1-4799-4378-4
- url
- http://dblp.uni-trier.de/db/conf/essderc/essderc2014.html#BisiSMRCMZ14
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%1 conf/essderc/BisiSMRCMZ14
%A Bisi, Davide
%A Stocco, Antonio
%A Meneghini, Matteo
%A Rampazzo, Fabiana
%A Cester, Andrea
%A Meneghesso, Gaudenzio
%A Zanoni, Enrico
%B ESSDERC
%D 2014
%I IEEE
%K dblp
%P 389-392
%T Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs.
%U http://dblp.uni-trier.de/db/conf/essderc/essderc2014.html#BisiSMRCMZ14
%@ 978-1-4799-4378-4
@inproceedings{conf/essderc/BisiSMRCMZ14,
added-at = {2024-05-07T00:00:00.000+0200},
author = {Bisi, Davide and Stocco, Antonio and Meneghini, Matteo and Rampazzo, Fabiana and Cester, Andrea and Meneghesso, Gaudenzio and Zanoni, Enrico},
biburl = {https://www.bibsonomy.org/bibtex/23215e3c046cae0e5b064521dc35d1be3/dblp},
booktitle = {ESSDERC},
crossref = {conf/essderc/2014},
ee = {https://doi.org/10.1109/ESSDERC.2014.6948842},
interhash = {c2b7d83ac857620489790877341c3561},
intrahash = {3215e3c046cae0e5b064521dc35d1be3},
isbn = {978-1-4799-4378-4},
keywords = {dblp},
pages = {389-392},
publisher = {IEEE},
timestamp = {2024-05-13T08:56:41.000+0200},
title = {Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs.},
url = {http://dblp.uni-trier.de/db/conf/essderc/essderc2014.html#BisiSMRCMZ14},
year = 2014
}