%0 Journal Article %1 AENM:AENM201701640 %A Jokar, Efat %A Huang, Zhong Yi %A Narra, Sudhakar %A Wang, Chi-Yung %A Kattoor, Vidya %A Chung, Chih-Chun %A Diau, Eric Wei-Guang %D 2017 %J Advanced Energy Materials %K new_material perovskite transportlayer %P n/a--n/a %R 10.1002/aenm.201701640 %T Anomalous Charge-Extraction Behavior for Graphene-Oxide (GO) and Reduced Graphene-Oxide (rGO) Films as Efficient p-Contact Layers for High-Performance Perovskite Solar Cells %U http://dx.doi.org/10.1002/aenm.201701640 %X Reduced graphene oxides (rGO) are synthesized via reduction of GO with reducing agents as a hole-extraction layer for high-performance inverted planar heterojunction perovskite solar cells. The best efficiencies of power conversion (PCE) of these rGO cells exceed 16%, much greater than those made of GO and poly(3,4-ethenedioxythiophene):poly(styrenesulfonate) films. A flexible rGO device shows PCE 13.8% and maintains 70% of its initial performance over 150 bending cycles. It is found that the hole-extraction period is much smaller for the GO/methylammonium lead-iodide perovskite (PSK) film than for the other rGO/PSK films, which contradicts their device performances. Photoluminescence and transient photoelectric decays are measured and control experiments are performed to prove that the reduction of the oxygen-containing groups in GO significantly decreases the ability of hole extraction from PSK to rGO and also retards the charge recombination at the rGO/PSK interface. When the hole injection from PSK to GO occurs rapidly, hole propagation from GO to the indium-doped tin oxide (ITO) substrate becomes a bottleneck to overcome, which leads to a rapid charge recombination that decreases the performance of the GO device relative to the rGO device.

@article{AENM:AENM201701640, abstract = {Reduced graphene oxides (rGO) are synthesized via reduction of GO with reducing agents as a hole-extraction layer for high-performance inverted planar heterojunction perovskite solar cells. The best efficiencies of power conversion (PCE) of these rGO cells exceed 16%, much greater than those made of GO and poly(3,4-ethenedioxythiophene):poly(styrenesulfonate) films. A flexible rGO device shows PCE 13.8% and maintains 70% of its initial performance over 150 bending cycles. It is found that the hole-extraction period is much smaller for the GO/methylammonium lead-iodide perovskite (PSK) film than for the other rGO/PSK films, which contradicts their device performances. Photoluminescence and transient photoelectric decays are measured and control experiments are performed to prove that the reduction of the oxygen-containing groups in GO significantly decreases the ability of hole extraction from PSK to rGO and also retards the charge recombination at the rGO/PSK interface. When the hole injection from PSK to GO occurs rapidly, hole propagation from GO to the indium-doped tin oxide (ITO) substrate becomes a bottleneck to overcome, which leads to a rapid charge recombination that decreases the performance of the GO device relative to the rGO device.}, added-at = {2017-11-14T11:20:05.000+0100}, author = {Jokar, Efat and Huang, Zhong Yi and Narra, Sudhakar and Wang, Chi-Yung and Kattoor, Vidya and Chung, Chih-Chun and Diau, Eric Wei-Guang}, biburl = {https://www.bibsonomy.org/bibtex/27fa968a7cc60a80016881986045d9cbd/bretschneider_m}, doi = {10.1002/aenm.201701640}, interhash = {d118c92d1f8ab686e8bd0d8b1967ab41}, intrahash = {7fa968a7cc60a80016881986045d9cbd}, issn = {1614-6840}, journal = {Advanced Energy Materials}, keywords = {new_material perovskite transportlayer}, pages = {n/a--n/a}, timestamp = {2017-11-14T11:20:05.000+0100}, title = {Anomalous Charge-Extraction Behavior for Graphene-Oxide (GO) and Reduced Graphene-Oxide (rGO) Films as Efficient p-Contact Layers for High-Performance Perovskite Solar Cells}, url = {http://dx.doi.org/10.1002/aenm.201701640}, year = 2017 }