%0 Journal Article %1 https://doi.org/10.1002/chem.202001953 %A Lê Anh, Mai %A Kaiser, Martin %A Ghimire, Madhav Prasad %A Richter, Manuel %A Koepernik, Klaus %A Gruschwitz, Markus %A Tegenkamp, Christoph %A Doert, Thomas %A Ruck, Michael %D 2020 %J Chem. Eur. J. %K a %N 67 %P 15549-15557 %R https://doi.org/10.1002/chem.202001953 %T The weak 3D Topological Insulator Bi$_12$Rh$_3$Sn$_3$I$_9$ %U https://chemistry-europe.onlinelibrary.wiley.com/doi/abs/10.1002/chem.202001953 %V 26 %X Abstract Topological insulators (TIs) gained high interest due to their protected electronic surface states that allow dissipation-free electron and information transport. In consequence, TIs are recommended as materials for spintronics and quantum computing. Yet, the number of well-characterized TIs is rather limited. To contribute to this field of research, we focused on new bismuth-based subiodides and recently succeeded in synthesizing a new compound Bi12Rh3Sn3I9, which is structurally closely related to Bi14Rh3I9 – a stable, layered material. In fact, Bi14Rh3I9 is the first experimentally supported weak 3D TI. Both structures are composed of well-defined intermetallic layers of ∞2(Bi4Rh)3I2+ with topologically protected electronic edge-states. The fundamental difference between Bi14Rh3I9 and Bi12Rh3Sn3I9 lies in the composition and the arrangement of the anionic spacer. While the intermetallic 2D TI layers in Bi14Rh3I9 are isolated by ∞1Bi2I82− chains, the isoelectronic substitution of bismuth(III) with tin(II) leads to ∞2Sn3I82− layers as anionic spacers. First transport experiments support the 2D character of this material class and revealed metallic conductivity.

@article{https://doi.org/10.1002/chem.202001953, abstract = {Abstract Topological insulators (TIs) gained high interest due to their protected electronic surface states that allow dissipation-free electron and information transport. In consequence, TIs are recommended as materials for spintronics and quantum computing. Yet, the number of well-characterized TIs is rather limited. To contribute to this field of research, we focused on new bismuth-based subiodides and recently succeeded in synthesizing a new compound Bi12Rh3Sn3I9, which is structurally closely related to Bi14Rh3I9 – a stable, layered material. In fact, Bi14Rh3I9 is the first experimentally supported weak 3D TI. Both structures are composed of well-defined intermetallic layers of ∞2[(Bi4Rh)3I]2+ with topologically protected electronic edge-states. The fundamental difference between Bi14Rh3I9 and Bi12Rh3Sn3I9 lies in the composition and the arrangement of the anionic spacer. While the intermetallic 2D TI layers in Bi14Rh3I9 are isolated by ∞1[Bi2I8]2− chains, the isoelectronic substitution of bismuth(III) with tin(II) leads to ∞2[Sn3I8]2− layers as anionic spacers. First transport experiments support the 2D character of this material class and revealed metallic conductivity.}, added-at = {2023-11-02T17:36:59.000+0100}, author = {Lê Anh, Mai and Kaiser, Martin and Ghimire, Madhav Prasad and Richter, Manuel and Koepernik, Klaus and Gruschwitz, Markus and Tegenkamp, Christoph and Doert, Thomas and Ruck, Michael}, biburl = {https://www.bibsonomy.org/bibtex/2b28ddff01a4a6f32f26e86b408acbf21/ctqmat}, day = 03, doi = {https://doi.org/10.1002/chem.202001953}, eprint = {https://chemistry-europe.onlinelibrary.wiley.com/doi/pdf/10.1002/chem.202001953}, interhash = {d2dc08e7a36c636db3b7a93d80bedf22}, intrahash = {b28ddff01a4a6f32f26e86b408acbf21}, journal = {Chem. Eur. J.}, keywords = {a}, month = {06}, number = 67, pages = {15549-15557}, timestamp = {2023-11-06T11:33:11.000+0100}, title = {The weak 3D Topological Insulator Bi$_{\mathbf{12}}$Rh$_{\mathbf{3}}$Sn$_{\mathbf{3}}$I$_{\mathbf{9}}$}, url = {https://chemistry-europe.onlinelibrary.wiley.com/doi/abs/10.1002/chem.202001953}, volume = 26, year = 2020 }