%0 Journal Article %1 Gurlo2004291 %A Gurlo, A. %A Sahm, M. %A Oprea, A. %A Barsan, N. %A Weimar, U. %D 2004 %J Sensors and Actuators B: Chemical %K ceramics conductivity dielectric electrical hematite materials semiconductors sensors %N 2 %P 291 - 298 %R DOI: 10.1016/j.snb.2004.04.075 %T A p- to n-transition on alpha-Fe2O3-based thick film sensors studied by conductance and work function change measurements %U http://www.sciencedirect.com/science/article/B6THH-4CJVFY6-2/2/fa5c729063197c4b3c34a853b1cbbbf7 %V 102 %X Transition from p- to n-type response, induced by the change in the gas concentration and the operating temperature, was observed for alpha-Fe2O3-based semiconducting sensors. This phenomenon is due to the formation of an inversion layer at the surface and therefore to the inversion of the type of mobile carrier at the surface. Different gas atmospheres leads to the different contribution of surface electrons and holes in the overall conductivity, which leads for the predominating either p- or n-type response.

@article{Gurlo2004291, abstract = {Transition from p- to n-type response, induced by the change in the gas concentration and the operating temperature, was observed for [alpha]-Fe2O3-based semiconducting sensors. This phenomenon is due to the formation of an inversion layer at the surface and therefore to the inversion of the type of mobile carrier at the surface. Different gas atmospheres leads to the different contribution of surface electrons and holes in the overall conductivity, which leads for the predominating either p- or n-type response.}, added-at = {2010-05-19T13:42:20.000+0200}, author = {Gurlo, A. and Sahm, M. and Oprea, A. and Barsan, N. and Weimar, U.}, biburl = {https://www.bibsonomy.org/bibtex/2b4ff967a35ae897b3735cacf5a2242a2/miguelfm}, doi = {DOI: 10.1016/j.snb.2004.04.075}, interhash = {db2a9138b7b5ab1ae874ba7a788fc765}, intrahash = {b4ff967a35ae897b3735cacf5a2242a2}, issn = {0925-4005}, journal = {Sensors and Actuators B: Chemical}, keywords = {ceramics conductivity dielectric electrical hematite materials semiconductors sensors}, number = 2, pages = {291 - 298}, timestamp = {2010-05-21T10:59:24.000+0200}, title = {A p- to n-transition on [alpha]-Fe2O3-based thick film sensors studied by conductance and work function change measurements}, url = {http://www.sciencedirect.com/science/article/B6THH-4CJVFY6-2/2/fa5c729063197c4b3c34a853b1cbbbf7}, volume = 102, year = 2004 }