%0 Journal Article %1 SCHLERETH2020125602 %A Schlereth, R. %A Hajer, J. %A Fürst, L. %A Schreyeck, S. %A Buhmann, H. %A Molenkamp, L.W. %D 2020 %J J. Cryst. Growth %K a %P 125602 %R https://doi.org/10.1016/j.jcrysgro.2020.125602 %T Band edge thermometry for the MBE growth of (Hg,Cd)Te-based materials %U https://www.sciencedirect.com/science/article/pii/S0022024820301251 %V 537 %X The material system (Hg,Cd)Te is a prototype system for topological insulators and Dirac semi-metals. Molecular beam epitaxy is the preferred method for the growth of (Hg,Cd)Te epilayer heterostructures and CdTe-HgTe core-shell nanowires. Unfortunately, the high crystalline quality desired for charge transport investigations is only achieved for a very narrow window of the growth temperature. Additionally, the low growth temperature requires a special thermometry. Here, we demonstrate the improvement of the growth of (Hg,Cd)Te epilayer heterostructures and CdTe nanowires by the use of band edge thermometry. We show that even for narrow-gap materials band edge thermometry provides a suitable method to control the temperature directly at the growth front with a high precision and reproducibility, in contrast to a conventionally used thermocouple.

@article{SCHLERETH2020125602, abstract = {The material system (Hg,Cd)Te is a prototype system for topological insulators and Dirac semi-metals. Molecular beam epitaxy is the preferred method for the growth of (Hg,Cd)Te epilayer heterostructures and CdTe-HgTe core-shell nanowires. Unfortunately, the high crystalline quality desired for charge transport investigations is only achieved for a very narrow window of the growth temperature. Additionally, the low growth temperature requires a special thermometry. Here, we demonstrate the improvement of the growth of (Hg,Cd)Te epilayer heterostructures and CdTe nanowires by the use of band edge thermometry. We show that even for narrow-gap materials band edge thermometry provides a suitable method to control the temperature directly at the growth front with a high precision and reproducibility, in contrast to a conventionally used thermocouple.}, added-at = {2023-10-31T16:04:29.000+0100}, author = {Schlereth, R. and Hajer, J. and Fürst, L. and Schreyeck, S. and Buhmann, H. and Molenkamp, L.W.}, biburl = {https://www.bibsonomy.org/bibtex/2ec4b03c10e0a7fc5fa836bdc14c0c665/ctqmat}, day = 01, doi = {https://doi.org/10.1016/j.jcrysgro.2020.125602}, interhash = {dceb90bcdec0e2a6bfb6919c7f5b60e2}, intrahash = {ec4b03c10e0a7fc5fa836bdc14c0c665}, issn = {0022-0248}, journal = {J. Cryst. Growth}, keywords = {a}, month = {05}, pages = 125602, timestamp = {2023-11-02T17:10:56.000+0100}, title = {Band edge thermometry for the MBE growth of (Hg,Cd)Te-based materials}, url = {https://www.sciencedirect.com/science/article/pii/S0022024820301251}, volume = 537, year = 2020 }