%0 Journal Article %1 noauthororeditor %A Liu, Bing %A Wagner, Tim %A Enzner, Stefan %A Eck, Philipp %A Kamp, Martin %A Sangiovanni, Giorgio %A Claessen, Ralph %D 2023 %I American Chemical Society %J Nano Lett. %K a %N 8 %P 3189-3195 %R 10.1021/acs.nanolett.2c04974 %T Moiré pattern formation in epitaxial growth on a covalent substrate: Sb on InSb(111)A %U https://doi.org/10.1021/acs.nanolett.2c04974 %V 23 %X Structural moiré superstructures arising from two competing lattices may lead to unexpected electronic behavior. Sb is predicted to show thickness-dependent topological properties, providing potential applications for low-energy-consuming electronic devices. Here we successfully synthesize ultrathin Sb films on semi-insulating InSb(111)A. Despite the covalent nature of the substrate, which has dangling bonds on the surface, we prove by scanning transmission electron microscopy that the first layer of Sb atoms grows in an unstrained manner. Rather than compensating for the lattice mismatch of −6.4% by structural modifications, the Sb films form a pronounced moiré pattern as we evidence by scanning tunneling microscopy. Our model calculations assign the moirépattern to a periodic surface corrugation. In agreement with theoretical predictions, irrespective of the moirémodulation, the topological surface state known on a thick Sb film is experimentally confirmed to persist down to small film thicknesses, and the Dirac point shifts toward lower binding energies with a decrease in Sb thickness.

@article{noauthororeditor, abstract = {Structural moiré superstructures arising from two competing lattices may lead to unexpected electronic behavior. Sb is predicted to show thickness-dependent topological properties, providing potential applications for low-energy-consuming electronic devices. Here we successfully synthesize ultrathin Sb films on semi-insulating InSb(111)A. Despite the covalent nature of the substrate, which has dangling bonds on the surface, we prove by scanning transmission electron microscopy that the first layer of Sb atoms grows in an unstrained manner. Rather than compensating for the lattice mismatch of −6.4% by structural modifications, the Sb films form a pronounced moiré pattern as we evidence by scanning tunneling microscopy. Our model calculations assign the moirépattern to a periodic surface corrugation. In agreement with theoretical predictions, irrespective of the moirémodulation, the topological surface state known on a thick Sb film is experimentally confirmed to persist down to small film thicknesses, and the Dirac point shifts toward lower binding energies with a decrease in Sb thickness.}, added-at = {2023-06-21T12:35:59.000+0200}, author = {Liu, Bing and Wagner, Tim and Enzner, Stefan and Eck, Philipp and Kamp, Martin and Sangiovanni, Giorgio and Claessen, Ralph}, biburl = {https://www.bibsonomy.org/bibtex/2bc0aa9a281eb2aeed02ce40eb2750e83/ctqmat}, day = 07, description = {Moiré pattern formation in epitaxial growth on a covalent substrate: Sb on InSb(111)A }, doi = {10.1021/acs.nanolett.2c04974}, interhash = {e31a10fd5517423ad4148d5efdf4a674}, intrahash = {bc0aa9a281eb2aeed02ce40eb2750e83}, issn = {1530-6984}, journal = {Nano Lett.}, keywords = {a}, month = {04}, number = 8, pages = {3189-3195}, publisher = {American Chemical Society}, timestamp = {2023-06-21T12:35:59.000+0200}, title = {Moiré pattern formation in epitaxial growth on a covalent substrate: Sb on InSb(111)A}, url = {https://doi.org/10.1021/acs.nanolett.2c04974}, volume = 23, year = 2023 }