%0 Journal Article %1 D3NH00480E %A Hermosilla-Palacios, M. Alejandra %A Martinez, Marissa %A Doud, Evan A. %A Hertel, Tobias %A Spokoyny, Alexander M. %A Cambré, Sofie %A Wenseleers, Wim %A Kim, Yong-Hyun %A Ferguson, Andrew J. %A Blackburn, Jeffrey L. %D 2024 %I The Royal Society of Chemistry %J Nanoscale Horiz. %K myown %P - %R 10.1039/D3NH00480E %T Carrier density and delocalization signatures in doped carbon nanotubes from quantitative magnetic resonance %U http://dx.doi.org/10.1039/D3NH00480E %X High-performance semiconductor materials and devices are needed to supply the growing energy and computing demand. Organic semiconductors (OSCs) are attractive options for opto-electronic devices, due to their low cost, extensive tunability, easy fabrication, and flexibility. Semiconducting single-walled carbon nanotubes (s-SWCNTs) have been extensively studied due to their high carrier mobility, stability and opto-electronic tunability. Although molecular charge transfer doping affords widely tunable carrier density and conductivity in s-SWCNTs (and OSCs in general), a pervasive challenge for such systems is reliable measurement of charge carrier density and mobility. In this work we demonstrate a direct quantification of charge carrier density, and by extension carrier mobility, in chemically doped s-SWCNTs by a nuclear magnetic resonance approach. The experimental results are verified by a phase-space filling doping model, and we suggest this approach should be broadly applicable for OSCs. Our results show that hole mobility in doped s-SWCNT networks increases with increasing charge carrier density, a finding that is contrary to that expected for mobility limited by ionized impurity scattering. We discuss the implications of this important finding for additional tunability and applicability of s-SWCNT and OSC devices.

@article{D3NH00480E, abstract = {High-performance semiconductor materials and devices are needed to supply the growing energy and computing demand. Organic semiconductors (OSCs) are attractive options for opto-electronic devices{,} due to their low cost{,} extensive tunability{,} easy fabrication{,} and flexibility. Semiconducting single-walled carbon nanotubes (s-SWCNTs) have been extensively studied due to their high carrier mobility{,} stability and opto-electronic tunability. Although molecular charge transfer doping affords widely tunable carrier density and conductivity in s-SWCNTs (and OSCs in general){,} a pervasive challenge for such systems is reliable measurement of charge carrier density and mobility. In this work we demonstrate a direct quantification of charge carrier density{,} and by extension carrier mobility{,} in chemically doped s-SWCNTs by a nuclear magnetic resonance approach. The experimental results are verified by a phase-space filling doping model{,} and we suggest this approach should be broadly applicable for OSCs. Our results show that hole mobility in doped s-SWCNT networks increases with increasing charge carrier density{,} a finding that is contrary to that expected for mobility limited by ionized impurity scattering. We discuss the implications of this important finding for additional tunability and applicability of s-SWCNT and OSC devices.}, added-at = {2023-12-05T10:40:38.000+0100}, author = {Hermosilla-Palacios, M. Alejandra and Martinez, Marissa and Doud, Evan A. and Hertel, Tobias and Spokoyny, Alexander M. and Cambré, Sofie and Wenseleers, Wim and Kim, Yong-Hyun and Ferguson, Andrew J. and Blackburn, Jeffrey L.}, biburl = {https://www.bibsonomy.org/bibtex/2d43e66a6be5b1874e0a683937b36624d/hertel-group}, doi = {10.1039/D3NH00480E}, interhash = {e4db57d765e7168e6efe79056a930ad2}, intrahash = {d43e66a6be5b1874e0a683937b36624d}, journal = {Nanoscale Horiz.}, keywords = {myown}, pages = {-}, publisher = {The Royal Society of Chemistry}, timestamp = {2023-12-05T10:40:38.000+0100}, title = {Carrier density and delocalization signatures in doped carbon nanotubes from quantitative magnetic resonance}, url = {http://dx.doi.org/10.1039/D3NH00480E}, year = 2024 }