%0 Journal Article %1 WOS:000222295000005 %A Bleicher, L %A Sasaki, JM %A Orloski, RV %A Cardoso, LP %A Hayashi, MA %A Swart, JW %C RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS %D 2004 %I ELSEVIER %J COMPUTER PHYSICS COMMUNICATIONS %K algorithms} diffraction; genetic implantation; ion {X-ray %N 2 %P 158-165 %R 10.1016/j.cpc.2004.02.015 %T IonRock: software for solving strain gradients of ion-implanted semiconductors by X-ray diffraction measurements and evolutionary programming %V 160 %X We present a program that uses an optimization algorithm to fit rocking curves of ion-implanted semiconductors. This is an inverse problem that cannot be solved by simple methods. However, using recursion formulae for rocking curve calculations and a model of ion distribution after implantation, it is possible to fit experimental data with a general-purpose optimization method. In our case, we use a modified version of the genetic algorithm, which has been shown to be a good technique for this problem. The program also calculates rocking curves for a given ion profile, such as those generated by ion implantation simulation programs. (C) 2004 Elsevier B.V. All rights reserved.

@article{WOS:000222295000005, abstract = {We present a program that uses an optimization algorithm to fit rocking curves of ion-implanted semiconductors. This is an inverse problem that cannot be solved by simple methods. However, using recursion formulae for rocking curve calculations and a model of ion distribution after implantation, it is possible to fit experimental data with a general-purpose optimization method. In our case, we use a modified version of the genetic algorithm, which has been shown to be a good technique for this problem. The program also calculates rocking curves for a given ion profile, such as those generated by ion implantation simulation programs. (C) 2004 Elsevier B.V. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS}, author = {Bleicher, L and Sasaki, JM and Orloski, RV and Cardoso, LP and Hayashi, MA and Swart, JW}, biburl = {https://www.bibsonomy.org/bibtex/24a5e8e06ba89ef5dffcb5b7a5a4d8fbc/ppgfis_ufc_br}, doi = {10.1016/j.cpc.2004.02.015}, interhash = {ea0f4ace3cddc488d1ca7ce1af2a88e1}, intrahash = {4a5e8e06ba89ef5dffcb5b7a5a4d8fbc}, issn = {0010-4655}, journal = {COMPUTER PHYSICS COMMUNICATIONS}, keywords = {algorithms} diffraction; genetic implantation; ion {X-ray}, number = 2, pages = {158-165}, publisher = {ELSEVIER}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {IonRock: software for solving strain gradients of ion-implanted semiconductors by X-ray diffraction measurements and evolutionary programming}, tppubtype = {article}, volume = 160, year = 2004 }