Abstract
The effects imposed to the electron energy levels Of Si/SiO2 quantum
dots by the presence of smooth graded interfaces and interfacial
carriers trap is studied. For small diameter quantum dots, while the
existence of graded interfaces strongly blue shifts the carrier energy
states (up to a few hundred meV), the effect of the interfacial carriers
trap is to red shift the energies, but to a lesser extend (under 50
meV). In addition, slight changes in the distance of the carriers trap
in relation to the center of the dot does not alter significantly the
energy spectrum. (C) 2002 Elsevier Science B.V. All rights reserved.
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