%0 Journal Article %1 WOS:000176520700030 %A de Sousa, JS %A Caetano, EWS %A Goncalves, JR %A Farias, GA %A Freire, VN %A da Silva, EF %C PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS %D 2002 %I ELSEVIER SCIENCE BV %J APPLIED SURFACE SCIENCE %K dot; electronic graded interfaces; quantum spectrum} {Si/SiO2 %N 1-4 %P 166-170 %R 10.1016/S0169-4332(01)00883-2 %T The influence of graded interfaces in the electronic spectrum of nanometer silicon dots %V 190 %X The effects imposed to the electron energy levels Of Si/SiO2 quantum dots by the presence of smooth graded interfaces and interfacial carriers trap is studied. For small diameter quantum dots, while the existence of graded interfaces strongly blue shifts the carrier energy states (up to a few hundred meV), the effect of the interfacial carriers trap is to red shift the energies, but to a lesser extend (under 50 meV). In addition, slight changes in the distance of the carriers trap in relation to the center of the dot does not alter significantly the energy spectrum. (C) 2002 Elsevier Science B.V. All rights reserved.

@article{WOS:000176520700030, abstract = {The effects imposed to the electron energy levels Of Si/SiO2 quantum dots by the presence of smooth graded interfaces and interfacial carriers trap is studied. For small diameter quantum dots, while the existence of graded interfaces strongly blue shifts the carrier energy states (up to a few hundred meV), the effect of the interfacial carriers trap is to red shift the energies, but to a lesser extend (under 50 meV). In addition, slight changes in the distance of the carriers trap in relation to the center of the dot does not alter significantly the energy spectrum. (C) 2002 Elsevier Science B.V. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, author = {de Sousa, JS and Caetano, EWS and Goncalves, JR and Farias, GA and Freire, VN and da Silva, EF}, biburl = {https://www.bibsonomy.org/bibtex/225726af75a5db95e4117d19b146b6a85/ppgfis_ufc_br}, doi = {10.1016/S0169-4332(01)00883-2}, interhash = {ed3a975fbce8851d1e12f2aeb4133617}, intrahash = {25726af75a5db95e4117d19b146b6a85}, issn = {0169-4332}, journal = {APPLIED SURFACE SCIENCE}, keywords = {dot; electronic graded interfaces; quantum spectrum} {Si/SiO2}, note = {8th International Conference on the Formation of Semiconductor Interfaces (ICFSI-8), HOKKAIDO UNIV, SAPPORO, JAPAN, JUN 10-15, 2001}, number = {1-4}, organization = {Japan Soc Appl Phys; Hokkaido Univ, Res Ctr Integrated Quantum Electr; Int Sci Exchange Program Minist Educ, Culture, Sports, Sci & Technol Japan}, pages = {166-170}, publisher = {ELSEVIER SCIENCE BV}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {The influence of graded interfaces in the electronic spectrum of nanometer silicon dots}, tppubtype = {article}, volume = 190, year = 2002 }