Bitte melden Sie sich an um selbst Rezensionen oder Kommentare zu erstellen.
Zitieren Sie diese Publikation
Mehr Zitationsstile
- bitte auswählen -
%0 Journal Article
%1 journals/jolpe/FernandezSAKG15
%A Fernández, Guillermo Indalecio
%A Seoane, Natalia
%A Aldegunde, Manuel
%A Kalna, Karol
%A García-Loureiro, Antonio J.
%D 2015
%J J. Low Power Electron.
%K dblp
%N 2
%P 256-262
%T Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold.
%U http://dblp.uni-trier.de/db/journals/jolpe/jolpe11.html#FernandezSAKG15
%V 11
@article{journals/jolpe/FernandezSAKG15,
added-at = {2020-05-22T00:00:00.000+0200},
author = {Fernández, Guillermo Indalecio and Seoane, Natalia and Aldegunde, Manuel and Kalna, Karol and García-Loureiro, Antonio J.},
biburl = {https://www.bibsonomy.org/bibtex/2d49872056594b60b1a1bac15dee18d32/dblp},
ee = {https://doi.org/10.1166/jolpe.2015.1371},
interhash = {ee78ebd9a4ef05d7f0a072b2344a486d},
intrahash = {d49872056594b60b1a1bac15dee18d32},
journal = {J. Low Power Electron.},
keywords = {dblp},
number = 2,
pages = {256-262},
timestamp = {2020-05-23T12:26:06.000+0200},
title = {Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold.},
url = {http://dblp.uni-trier.de/db/journals/jolpe/jolpe11.html#FernandezSAKG15},
volume = 11,
year = 2015
}