Article,
Chemical vapor deposition of hexagonal boron nitride films in the reduced pressure
Materials Research Bulletin, 34 (14-15): 2215--2220 (1999)
DOI: doi:10.1016/S0025-5408(00)00156-2
Abstract
Hexagonal boron nitride (h-BN) films were deposited onto a graphite
substrate in reduced pressure by reacting ammonia and boron tribromide
at 800?1200?C. The growth rate of h-BN films was dependent on the
substrate temperature and the total pressures. The growth rate increased
with increasing the substrate temperature at the pressure of 2 kPa,
while it showed a maximum value at the pressures of 4 and 8 kPa.
The temperature at which the maximum growth rate occurs decreased
with increasing total pressure. With increasing the substrate temperature
and total pressure, the apparent grain size increased and the surface
morphology showed a rough, cauliflower-like structure.
