%0 Book Section %1 statphys23_0445 %A Ganetsos, T.H. %A Bischoff, L. %A Pilz, W. %A Akhmadaliev, C. %A Kotsos, B. %A Laskaris, N. %B Abstract Book of the XXIII IUPAP International Conference on Statistical Physics %C Genova, Italy %D 2007 %E Pietronero, Luciano %E Loreto, Vittorio %E Zapperi, Stefano %K alloys deficit energy fib ion liquid metal source statphys23 topic-6 %T Energy deficit measurements on a BiGa alloy liquid metal alloy ion source %U http://st23.statphys23.org/webservices/abstract/preview_pop.php?ID_PAPER=445 %X Introduction\\ The liquid metal ion source, is one of the basis of focused ion beams systems which use a variety of metal ions (with currents of 1pA to 30nA). The ion beam can be focused into diameters smaller than 10nm with current densities of several A/cm2. The predominate use of these systems has been focused into various aspects of IC fabrication. Implantation is an essential process for the fabrication of electronic devices and integrated circuits. One of the most important parameters in the operation of focused ion beam (FIB) columns is the energy spread of the ion beam, essential for the chromatic aberration, normally expressed as the full width at half the maximum height of the energy distribution (FWHM)1. When it was demonstrated that failure analysis and integrated circuit modification could be done with focused ion beams utilizing liquid metal ion sources, the resulting technological push for high performance caused the rapid development of new ion beam instrumentation. Among other applications, FIBs are now used for research lithography, direct implantation (using alloy liquid metal ion sources (LMIS) with ion species including As, B, Be, Co, Ga, Ge, Nd, Er, Au and Bi), lithographic mask repair and a wide variety of micromachining uses 2. Experimental results and discussions\\ An interesting element for materials investigation and modification is bismuth, which offers a broad spectrum of applications. Silicon doped with bismuth (n-type) is an interesting choice because the ionization energy of Bi in Si is much larger than that of other group-V elements 3. Turning now to the present work we investigated a BiGa LMIS 4. Fig.1 shows the energy distribution, characteristic of this source for Bi++ ions at an emission current 10microA. We also present the energy spread (DE) of the main ion species of the beam drawn from the BiGa source as a function of source emission current (i). In conclusion, even though the deviation from the 2/3 power law of the low current portion of the versus i curves has been explained in terms of current instabilities at the emitter and/or in the different behaviour of the alloy LMIS compared with LMIS working with pure metals. Acknowledgments \\ This research work was supported by EPEAEK PROGRAMME, ARXIMIDIS II. Th. Ganetsos wishes to express his thanks for 10 days stay in Dresden-Rossendorf Research Center, Institute of Ion Beam Physics and Materials Research, where this work was carried out. References\\ 1) G.L.R. Mair, J.Phys. D: Appl. Phys. 29 (1996) 2186-2192\\ 2) J. Orloff, M. Utlaut, L. Swanson, High Resolution Focused Ion Beams FIB and Its applications, Kluwer Academic/Plenum Publishers, NewYork, USA, 2003\\ 3) A. Ferreira da Silva: J. Appl. Phys. 76, 5249 (1994)\\ 4) L. Bischoff , W. Pilz, Th. Ganetsos, R. Forbes and Ch. Akhmadaliev Ultramicroscopy (in press, online available)

@incollection{statphys23_0445, abstract = {Introduction\\ The liquid metal ion source, is one of the basis of focused ion beams systems which use a variety of metal ions (with currents of 1pA to 30nA). The ion beam can be focused into diameters smaller than 10nm with current densities of several A/cm2. The predominate use of these systems has been focused into various aspects of IC fabrication. Implantation is an essential process for the fabrication of electronic devices and integrated circuits. One of the most important parameters in the operation of focused ion beam (FIB) columns is the energy spread of the ion beam, essential for the chromatic aberration, normally expressed as the full width at half the maximum height of the energy distribution (FWHM)[1]. When it was demonstrated that failure analysis and integrated circuit modification could be done with focused ion beams utilizing liquid metal ion sources, the resulting technological push for high performance caused the rapid development of new ion beam instrumentation. Among other applications, FIBs are now used for research lithography, direct implantation (using alloy liquid metal ion sources (LMIS) with ion species including As, B, Be, Co, Ga, Ge, Nd, Er, Au and Bi), lithographic mask repair and a wide variety of micromachining uses [2]. Experimental results and discussions\\ An interesting element for materials investigation and modification is bismuth, which offers a broad spectrum of applications. Silicon doped with bismuth (n-type) is an interesting choice because the ionization energy of Bi in Si is much larger than that of other group-V elements [3]. Turning now to the present work we investigated a BiGa LMIS [4]. Fig.1 shows the energy distribution, characteristic of this source for Bi++ ions at an emission current 10microA. We also present the energy spread (DE) of the main ion species of the beam drawn from the BiGa source as a function of source emission current (i). In conclusion, even though the deviation from the 2/3 power law of the low current portion of the versus i curves has been explained in terms of current instabilities at the emitter and/or in the different behaviour of the alloy LMIS compared with LMIS working with pure metals. Acknowledgments \\ This research work was supported by EPEAEK PROGRAMME, ARXIMIDIS II. Th. Ganetsos wishes to express his thanks for 10 days stay in Dresden-Rossendorf Research Center, Institute of Ion Beam Physics and Materials Research, where this work was carried out. References\\ 1) G.L.R. Mair, J.Phys. D: Appl. Phys. 29 (1996) 2186-2192\\ 2) J. Orloff, M. Utlaut, L. Swanson, High Resolution Focused Ion Beams FIB and Its applications, Kluwer Academic/Plenum Publishers, NewYork, USA, 2003\\ 3) A. Ferreira da Silva: J. Appl. Phys. 76, 5249 (1994)\\ 4) L. Bischoff , W. Pilz, Th. Ganetsos, R. Forbes and Ch. Akhmadaliev Ultramicroscopy (in press, online available)}, added-at = {2007-06-20T10:16:09.000+0200}, address = {Genova, Italy}, author = {Ganetsos, T.H. and Bischoff, L. and Pilz, W. and Akhmadaliev, C. and Kotsos, B. and Laskaris, N.}, biburl = {https://www.bibsonomy.org/bibtex/262c924859c0cb1968455bcb92f1b12e7/statphys23}, booktitle = {Abstract Book of the XXIII IUPAP International Conference on Statistical Physics}, editor = {Pietronero, Luciano and Loreto, Vittorio and Zapperi, Stefano}, interhash = {fc898814bc7968d1acf195c26f9faf89}, intrahash = {62c924859c0cb1968455bcb92f1b12e7}, keywords = {alloys deficit energy fib ion liquid metal source statphys23 topic-6}, month = {9-13 July}, timestamp = {2007-06-20T10:16:20.000+0200}, title = {Energy deficit measurements on a BiGa alloy liquid metal alloy ion source}, url = {http://st23.statphys23.org/webservices/abstract/preview_pop.php?ID_PAPER=445}, year = 2007 }